2SC2643 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2643
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 160 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: XM24
2SC2643 Transistor Equivalent Substitute - Cross-Reference Search
2SC2643 Datasheet (PDF)
2sc2644.pdf
2SC2644 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2644 VHF~UHF Band Wideband Amplifier Applications Unit: mm High gain Low IMD fT = 4 GHz (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 25 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3.0 VCollector current IC 120 mA
2sc2647.pdf
Transistor2SC2647Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0R0.9FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/AM radios.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05Absolute Ma
2sc2647 e.pdf
Transistor2SC2647Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0R0.9FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/AM radios.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05Absolute Ma
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
