2SC267 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC267
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 45 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO50-1
2SC267 Transistor Equivalent Substitute - Cross-Reference Search
2SC267 Datasheet (PDF)
2sc2670.pdf
2SC2670 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2670 High Frequency Amplifier Applications Unit: mm AM High Frequency Amplifier Applications AM Frequency Converter Applications Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter v
2sc2671 e.pdf
Transistor2SC2671(F)Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesLow noise figure NF.High gain.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45 0.1Collector to base voltage VCBO 15 V1.27 1.27Collector to emitter voltage VCER* 14 VE
2sc2671.pdf
Transistor2SC2671(F)Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesLow noise figure NF.High gain.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45 0.1Collector to base voltage VCBO 15 V1.27 1.27Collector to emitter voltage VCER* 14 VE
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
