All Transistors. 2SC2670R Datasheet

 

2SC2670R Datasheet and Replacement


   Type Designator: 2SC2670R
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 2.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO92
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2SC2670R Datasheet (PDF)

 7.1. Size:349K  toshiba
 2sc2670.pdf pdf_icon

2SC2670R

2SC2670 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2670 High Frequency Amplifier Applications Unit: mm AM High Frequency Amplifier Applications AM Frequency Converter Applications Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter v

 8.1. Size:255K  1
 2sc2673 2sc4040.pdf pdf_icon

2SC2670R

 8.2. Size:120K  rohm
 2sc2673.pdf pdf_icon

2SC2670R

 8.3. Size:41K  panasonic
 2sc2671 e.pdf pdf_icon

2SC2670R

Transistor2SC2671(F)Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesLow noise figure NF.High gain.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45 0.1Collector to base voltage VCBO 15 V1.27 1.27Collector to emitter voltage VCER* 14 VE

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History: 2SD1007HR | ED1602D | DRC9143X | KT3151G9 | 2SD580 | BDY12B | SFE245

Keywords - 2SC2670R transistor datasheet

 2SC2670R cross reference
 2SC2670R equivalent finder
 2SC2670R lookup
 2SC2670R substitution
 2SC2670R replacement

 

 
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