2N1890S pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2N1890S Specs and Replacement

Type Designator: 2N1890S

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 85 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO5

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1893 NPN medium power transistor 1997 Apr 17 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistor 2N1893 FEATURES PINNING Low current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitt... See More ⇒