2SC2676 Specs and Replacement

Type Designator: 2SC2676

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 1.2 pF

Forward Current Transfer Ratio (hFE), MIN: 400

Noise Figure, dB: -

Package: TO92

 2SC2676 Substitution

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2SC2676 datasheet

 8.1. Size:255K  1

 2sc2673 2sc4040.pdf pdf_icon

2SC2676

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 8.2. Size:349K  toshiba

 2sc2670.pdf pdf_icon

2SC2676

2SC2670 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2670 High Frequency Amplifier Applications Unit mm AM High Frequency Amplifier Applications AM Frequency Converter Applications Low noise figure NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter v... See More ⇒

 8.3. Size:120K  rohm

 2sc2673.pdf pdf_icon

2SC2676

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 8.4. Size:41K  panasonic

 2sc2671 e.pdf pdf_icon

2SC2676

Transistor 2SC2671(F) Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm 5.0 0.2 4.0 0.2 Features Low noise figure NF. High gain. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 15 V 1.27 1.27 Collector to emitter voltage VCER* 14 V E... See More ⇒

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Detailed specifications: 2SC2670O, 2SC2670R, 2SC2670Y, 2SC2671, 2SC2672, 2SC2673, 2SC2674, 2SC2675, BD140, 2SC2677, 2SC2678, 2SC2679, 2SC267A, 2SC268, 2SC2680, 2SC2681, 2SC2682

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