2SC2688 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2688
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO126
2SC2688 Transistor Equivalent Substitute - Cross-Reference Search
2SC2688 Datasheet (PDF)
2sc2688.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre 3.0 pF (VCB=30V) fT 50MHz (VCE=30V, IE=-10mA) ORDERING INFORMATION O
2sc2688.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SC2688 TRANSISTOR (NPN)TO-126 FEATURES 1. EMITTERColor TV chroma out pupt circuits 2. COLLECOTR3. BASE Equivalent Circuit C2688=Device code Solid dot = Green molding compound device, if none, the normal device C2688 XXXXXX=Code ORDERING INFORMATION Part Number
2sc2688.pdf
2SC2688(NPN) TO-126 TransistorTO-1261. EMITTER 2. COLLECOTR 3. BASE 3 21 Features Color TV chroma out pupt circuits 2.5007.4002.9001.1007.8001.5003.9003.0004.1003.200Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) 10.6000.00011.0000.300Symbol Parameter Value Units2.100VCBO 300 VCollector-Emitter
2sc2688 3da2688.pdf
2SC2688(3DA2688) NPN /SILICON NPN TRANSISTOR : Purpose: Color TV chroma output circuits. :C ,f re TFeatures: Low C , high f . re T/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 300 V CBO V 300 V CEO V 5.0 V EBO I 200 mA C P (Ta=25)
2sc2688.pdf
isc Silicon NPN Power Transistor 2SC2688DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 50mA, I = 5mACE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in Color TV chroma output circuits.ABSOLUTE MAXIMUM RATINGS(T =2
2sc2681.pdf
isc Silicon NPN Power Transistor 2SC2681DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 115V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1141Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifierHigh frequency power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
2sc2682.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2682DESCRIPTIONHigh voltageLow Saturation VoltageComplementary to 2SA1142 PNP transistor100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SC2682 is designed for use in audio frequencypower amplifierABSOLUTE MAXIMUM RATINGS(T =25)
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: NSV60200LT1G
History: NSV60200LT1G
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