2SC2689 Datasheet and Replacement
Type Designator: 2SC2689
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10
W
Maximum Collector-Base Voltage |Vcb|: 300
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.2
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 40
MHz
Collector Capacitance (Cc): 3
pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package:
TO202
- BJT Cross-Reference Search
2SC2689 Datasheet (PDF)
8.3. Size:256K utc
2sc2688.pdf 

UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre 3.0 pF (VCB=30V) fT 50MHz (VCE=30V, IE=-10mA) ORDERING INFORMATION O
8.5. Size:660K jiangsu
2sc2688.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SC2688 TRANSISTOR (NPN)TO-126 FEATURES 1. EMITTERColor TV chroma out pupt circuits 2. COLLECOTR3. BASE Equivalent Circuit C2688=Device code Solid dot = Green molding compound device, if none, the normal device C2688 XXXXXX=Code ORDERING INFORMATION Part Number
8.6. Size:230K lge
2sc2688.pdf 

2SC2688(NPN) TO-126 TransistorTO-1261. EMITTER 2. COLLECOTR 3. BASE 3 21 Features Color TV chroma out pupt circuits 2.5007.4002.9001.1007.8001.5003.9003.0004.1003.200Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) 10.6000.00011.0000.300Symbol Parameter Value Units2.100VCBO 300 VCollector-Emitter
8.7. Size:157K foshan
2sc2688 3da2688.pdf 

2SC2688(3DA2688) NPN /SILICON NPN TRANSISTOR : Purpose: Color TV chroma output circuits. :C ,f re TFeatures: Low C , high f . re T/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 300 V CBO V 300 V CEO V 5.0 V EBO I 200 mA C P (Ta=25)
8.8. Size:241K inchange semiconductor
2sc2688.pdf 

isc Silicon NPN Power Transistor 2SC2688DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 50mA, I = 5mACE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in Color TV chroma output circuits.ABSOLUTE MAXIMUM RATINGS(T =2
8.9. Size:202K inchange semiconductor
2sc2681.pdf 

isc Silicon NPN Power Transistor 2SC2681DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 115V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1141Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifierHigh frequency power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
8.10. Size:199K inchange semiconductor
2sc2682.pdf 

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2682DESCRIPTIONHigh voltageLow Saturation VoltageComplementary to 2SA1142 PNP transistor100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SC2682 is designed for use in audio frequencypower amplifierABSOLUTE MAXIMUM RATINGS(T =25)
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History: GET881
| 2SC382G
| TIP41G
| BC858BL3
| BSXP61
| DTA113ZCA
| 2SD189
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