2SC2690O Specs and Replacement
Type Designator: 2SC2690O
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 175 MHz
Collector Capacitance (Cc): 19 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO126
2SC2690O Substitution
- BJT ⓘ Cross-Reference Search
2SC2690O datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2690 DESCRIPTION High voltage and high fT Complementary to 2SA1220 PNP transistor 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SC2690 is general purpose transistors designed For use in audio and radio frequency power amplifiers. Suitable... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2690 2SC2690A DESCRIPTION With TO-126 package Complement to type 2SA1220/1220A APPLICATIONS For use in audio and radio frequency power amplifiers PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CON... See More ⇒
Detailed specifications: 2SC268A, 2SC268B, 2SC269, 2SC2690, 2SC2690A, 2SC2690AO, 2SC2690AR, 2SC2690AY, 8050, 2SC2690R, 2SC2690Y, 2SC2691, 2SC2692, 2SC2693, 2SC2694, 2SC2695, 2SC27
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