2SC2712 Datasheet and Replacement

2SC2712 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2712 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = 50 V, IC = 150 mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) High hFE: hFE = 70~700 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to

UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - 2S

2SC2712 0.15A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE Low Noise: NF=1dB(Typ.), 10db(Max.) AL Complements of the 2SA1162 33Top ViewC BCLASSIFICATION OF hFE 11 22K EProduct-Rank 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL Range 70~140 120~240 20

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2712 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURE 3. COLLECTOR Audio Frequency General Purpose Amplifier Applications Low Noise: NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value

2SC2712 SOT-23 TRANSISTOR (NPN) 1. BASE FEATURE 2. EMITTER Low Noise: NF=1 dB (Typ),10dB(MAX) 3. COLLECTOR Complementary to 2SA1162 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collecto

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM2712MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 50 Vdc-C

2SC2712 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Low Noise: NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage 5 V IC Collec

2SC2712 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features High voltage, high current, high hFE, low noise, excellent hFE linearity. / Applications Audio frequency genera

SMD Type TransistorsNPN Transistors2SC2712SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesHigh voltage and high current: VCEO = 50 V, IC = 150 mA (max)1 2Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.)+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1High hFE: hFE = 70 700Low noise: NF = 1dB (typ.), 10dB (max)1.Base2.Emitter3.collector

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD. 2SC2712 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 50 Vdc - Collector-Base Voltage VCBO 60 Vdc - Emitter-Base Voltage VEBO 5.0 Vdc -

Plastic-Encapsulate TransistorsFEATURES(NPN)2SC2712Low Noise: NF=1 dB (Typ),10dB(MAX)Complementary to 2SA1162MAXIMUM RATINGS (TA=25 unless otherwise noted)Parameter Symbol Value UnitVCBOCollector-Base Voltage 60 VVCEOCollector-Emitter Voltage 50 VVEBOEmitter-Base Voltage 5 VICCollector Current -Continuous 150 mA1. BASECollector Power Dissipation PC 150 mW2. E

isc Silicon NPN Power Transistor 2SC2712DESCRIPTIONWith SOT-23 packagingHigh collector-base voltageHigh power dissipationLow saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 50 VCBO

2SC2712Bipolar Transistors Silicon NPN Epitaxial Type2SC27121. Applications Low-Frequency Amplifiers Audio Frequency General Purpose Amplifier Applications AM Amplifiers2. Features(1) AEC-Q101 qualified (Please see the orderable part number list)(2) High voltage: VCEO = 50 V(3) High collector current: IC = 150 mA (max)(4) High hFE: hFE = 70 to 700(5) Excellent h

2SC2712 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2712 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: V = 50 V, I = 150 mA (max) CEO C Excellent h linearity : h (I = 0.1 mA)/ h (I = 2 mA) FE FE C FE C = 0.95 (typ.) High h h = 70 to 700 FE: FE Low noise: NF = 1dB (typ.), 10dB (max) C

2SC2712-OMCCMicro Commercial ComponentsTM2SC2712-Y20736 Marilla Street ChatsworthMicro Commercial Components2SC2712-GRCA 91311Phone: (818) 701-49332SC2712-BLFax: (818) 701-4939FeaturesNPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Complementary to 2SA1162 Epoxy meets UL 94 V-

2SC2712-OMCCMicro Commercial ComponentsTM2SC2712-Y20736 Marilla Street ChatsworthMicro Commercial Components2SC2712-GRCA 91311Phone: (818) 701-49332SC2712-BLFax: (818) 701-4939FeaturesNPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Complementary to 2SA1162 Epoxy meets UL 94 V-

2SC2712-OMCCMicro Commercial ComponentsTM2SC2712-Y20736 Marilla Street ChatsworthMicro Commercial Components2SC2712-GRCA 91311Phone: (818) 701-49332SC2712-BLFax: (818) 701-4939FeaturesNPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Complementary to 2SA1162 Epoxy meets UL 94 V-

2SC2712-OMCCMicro Commercial ComponentsTM2SC2712-Y20736 Marilla Street ChatsworthMicro Commercial Components2SC2712-GRCA 91311Phone: (818) 701-49332SC2712-BLFax: (818) 701-4939FeaturesNPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Complementary to 2SA1162 Epoxy meets UL 94 V-

2SC2712LT1 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. * High Voltage and High Current: Vceo=50V,Ic=150mA(Max.) Package:SOT-23 * Excellent hFE Linearity: hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.) * High hFE: hFE=70-700 * Low Noise: NF=1dB(Typ.),10dB(Max.) * Complementary to 2SA1162 ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic

RUMW UMW 2SC2712SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SC2712 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURE 3. COLLECTOR Audio Frequency General Purpose Amplifier Applications Low Noise: NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V

2SC2712NPN Transistors321.Base2.Emitter1 3.CollectorFeaturesHigh voltage and high current: VCEO = 50 V, IC = 150 mA (max) Simplified outline(SOT-23)Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.)High hFE: hFE = 70 700Low noise: NF = 1dB (typ.), 10dB (max)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage V