2SC2719 Datasheet, Equivalent, Cross Reference Search

2SC2719 Transistor Equivalent Substitute - Cross-Reference Search

2SC2719 Datasheet (PDF)

8.1. 2sc2712.pdf Size:264K _toshiba

2SC2712 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2712 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = 50 V, IC = 150 mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) High hFE: hFE = 70~700 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to

8.2. 2sc2715.pdf Size:333K _toshiba

2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2715 High Frequency Amplifier Applications Unit: mm High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV. IF stage. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter voltage VCE

 8.3. 2sc2714.pdf Size:510K _toshiba

2SC2714 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2714 High Frequency Amplifier Applications Unit: mm FM, RF, MIX,IF Amplifier Applications Small reverse transfer capacitance: Cre = 0.7 pF (typ.) Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage

8.4. 2sc2716.pdf Size:333K _toshiba

2SC2716 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2716 High Frequency Amplifier Applications Unit: mm AM High Frequency Amplifier Applications AM Frequency Converter Applications Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter v

 8.5. 2sc2216 2sc2717.pdf Size:267K _toshiba

2SC2216,2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2216,2SC2717 TV Final Picture IF Amplifier Applications Unit: mm High gain: Gpe = 33dB (typ.) (f = 45 MHz) Good linearity of h . FEMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating Unit2SC2216 50Collector-base voltage VCBO V 2SC2717 30 2SC2216 45Collector-emitter VCEO

8.6. 2sc2713.pdf Size:327K _toshiba

2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2713 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = 120 V Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h h = 200~700 FE: FE Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SA1163 Small package

8.7. 2sc2710.pdf Size:205K _toshiba

2SC2710 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2710 For Audio Amplifier Applications Unit: mm High DC current gain: hFE (1) = 100~320 Complementary to 2SA1150 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter voltage VCEO 30 VEmitter-base voltage VEBO 5 VCollector cur

8.8. 2sc2712-bl.pdf Size:241K _mcc

2SC2712-OMCCMicro Commercial ComponentsTM2SC2712-Y20736 Marilla Street ChatsworthMicro Commercial Components2SC2712-GRCA 91311Phone: (818) 701-49332SC2712-BLFax: (818) 701-4939FeaturesNPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Complementary to 2SA1162 Epoxy meets UL 94 V-

8.9. 2sc2712-gr.pdf Size:241K _mcc

2SC2712-OMCCMicro Commercial ComponentsTM2SC2712-Y20736 Marilla Street ChatsworthMicro Commercial Components2SC2712-GRCA 91311Phone: (818) 701-49332SC2712-BLFax: (818) 701-4939FeaturesNPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Complementary to 2SA1162 Epoxy meets UL 94 V-

8.10. 2sc2712-o.pdf Size:241K _mcc

2SC2712-OMCCMicro Commercial ComponentsTM2SC2712-Y20736 Marilla Street ChatsworthMicro Commercial Components2SC2712-GRCA 91311Phone: (818) 701-49332SC2712-BLFax: (818) 701-4939FeaturesNPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Complementary to 2SA1162 Epoxy meets UL 94 V-

8.11. 2sc2712-y.pdf Size:241K _mcc

2SC2712-OMCCMicro Commercial ComponentsTM2SC2712-Y20736 Marilla Street ChatsworthMicro Commercial Components2SC2712-GRCA 91311Phone: (818) 701-49332SC2712-BLFax: (818) 701-4939FeaturesNPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Complementary to 2SA1162 Epoxy meets UL 94 V-

8.12. 2sc2712.pdf Size:201K _utc

UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise Lead-free: 2SC2712L Halogen-free:2SC2712G ORDERING INFORMATION Ordering Number Pin Assignment Package P

8.13. 2sc2712.pdf Size:368K _secos

2SC2712 0.15A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE Low Noise: NF=1dB(Typ.), 10db(Max.) AL Complements of the 2SA1162 33Top ViewC BCLASSIFICATION OF hFE 11 22K EProduct-Rank 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL Range 70~140 120~240 20

8.14. 2sc2714.pdf Size:704K _secos

2SC2714 0.02A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Small reverse Transfer CapacitanceCre=0.7pF(typ.) AL Low Noise FigureNF=2.5dB(typ.)(f=100MHz) 33Top View C BCLASSIFICATION OF hFE 11 22K EProduct-Rank 2SC2714-R 2SC2714-O 2SC2

8.15. 2sc2717.pdf Size:172K _secos

2SC2717 0.05A , 30V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High GainGpe=33 dB(Typ.)(f =45MHz) G H Good Linearity of hFE BaseEmitter JCollectorA DMillimeter REF.Min. Max.BA 4.40 4.70B 4.30 4.70KC 12.70 - D 3.30 3.81E

8.16. 2sc2712.pdf Size:653K _jiangsu

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2712 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURE 3. COLLECTOR Audio Frequency General Purpose Amplifier Applications Low Noise: NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value

8.17. 2sc2714.pdf Size:909K _jiangsu

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2714 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Small reverse Transfer Capacitance:Cre=0.7pF(typ.) Low Noise Figure:NF=2.5dB(typ.) (f=100MHz) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage

8.18. 2sc2712.pdf Size:732K _htsemi

2SC2712 SOT-23 TRANSISTOR (NPN) 1. BASE FEATURE 2. EMITTER Low Noise: NF=1 dB (Typ),10dB(MAX) 3. COLLECTOR Complementary to 2SA1162 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collecto

8.19. 2sc2715.pdf Size:1110K _htsemi

2SC2715SOT-23 TRANSISTOR (NPN)FEATURES 1. BASE 2. EMITTER High Power Gain3. COLLECTOR Recommended for FM IF,OSC Stage and AM CONV. IF Stage. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA PC C

8.20. 2sc2714.pdf Size:466K _htsemi

2SC2714TRANSISTOR (NPN)SOT-23 1. BASE FEATURES 2. EMITTER Small reverse Transfer Capacitance:Cre=0.7pF(typ.) 3. COLLECTOR Low Noise Figure:NF=2.5dB(typ.) (f=100MHz) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 4 V IC Collector Current -C

8.21. 2sc2712.pdf Size:274K _gsme

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM2712MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 50 Vdc-C

8.22. 2sc2712 sot-23.pdf Size:201K _lge

2SC2712 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Low Noise: NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage 5 V IC Collec

8.23. 2sc2715.pdf Size:317K _lge

2SC2715 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features High Power Gain: Gpe=2dB(Typ.)(f=10.7MHz) Recommended for FM IF,OSC Stage and AM CONV. IF Stage. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO E

8.24. 2sc2714.pdf Size:298K _lge

2SC2714 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR Features Small reverse Transfer Capacitance:Cre=0.7pF(typ.) Low Noise Figure:NF=2.5dB(typ.) (f=100MHz) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 VDimensions in inches and (millimeters)VEBO Emitter-

8.25. 2sc2717.pdf Size:298K _lge

2SC2717(NPN)TO-92 Bipolar TransistorsTO-92 1. BASE 2. EMITTER 3. COLLECTOR FeaturesHigh Gain: Gpe =33 dB ( Typ. ) ( f =45MHZ) Good Linearity of hFE. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage 4 V

8.26. 2sc2714.pdf Size:664K _wietron

2SC2714NPN General Purpose TransistorsP b Lead(Pb)-FreeSOT-23 ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO VIc=10A,IE=0 40 Collector-emitter breakdown voltage V(BR)CEO VIc=1mA,IB=0 30 Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 4 VCollector cut-o

8.27. 2sc2712.pdf Size:918K _blue-rocket-elect

2SC2712 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features High voltage, high current, high hFE, low noise, excellent hFE linearity. / Applications Audio frequency genera

8.28. 2sc2717m.pdf Size:923K _blue-rocket-elect

2SC2717M(BR3DG2717M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,h FEHigh gain, good linearity of hFE. / Applications TV final picture IF amplifier applications. / Equival

8.29. 2sc2715.pdf Size:626K _blue-rocket-elect

2SC2715 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features High power gain, recommended for FM IF,OSC stage and AM CONV.IF stage. / Applications High frequency a

8.30. 2sc2712.pdf Size:1048K _kexin

SMD Type TransistorsNPN Transistors2SC2712SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesHigh voltage and high current: VCEO = 50 V, IC = 150 mA (max)1 2Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.)+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1High hFE: hFE = 70 700Low noise: NF = 1dB (typ.), 10dB (max)1.Base2.Emitter3.collector

8.31. 2sc2715.pdf Size:1522K _kexin

SMD Type TransistorsNPN Transistors2SC2715SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=30V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Colle

8.32. 2sc2714.pdf Size:1075K _kexin

SMD Type TransistorsNPN Transistors2SC2714SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=20mA1 2 Collector Emitter Voltage VCEO=30V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Colle

8.33. 2sc2716.pdf Size:1123K _kexin

SMD Type TransistorsNPN Transistors2SC2716SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=30V+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collect

8.34. 2sc2713.pdf Size:1438K _kexin

SMD Type TransistorsNPN Transistors2SC2713SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 High voltage: VCEO = 120 V High hFE: hFE = 200~700 Low noise: NF = 1dB (typ.), 10dB (max) 1 2+0.050.95+0.1-0.1 0.1 -0.01 Small package1.9+0.1-0.1 Complementary to 2SA11631.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25

8.35. 2sc2712lt1.pdf Size:137K _hfzt

2SC2712LT1 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. * High Voltage and High Current: Vceo=50V,Ic=150mA(Max.) Package:SOT-23 * Excellent hFE Linearity: hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.) * High hFE: hFE=70-700 * Low Noise: NF=1dB(Typ.),10dB(Max.) * Complementary to 2SA1162 ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic

8.36. 2sc2712.pdf Size:114K _cn_fosan

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD. 2SC2712 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 50 Vdc - Collector-Base Voltage VCBO 60 Vdc - Emitter-Base Voltage VEBO 5.0 Vdc -

8.37. 2sc2712.pdf Size:195K _cn_hottech

Plastic-Encapsulate TransistorsFEATURES(NPN)2SC2712Low Noise: NF=1 dB (Typ),10dB(MAX)Complementary to 2SA1162MAXIMUM RATINGS (TA=25 unless otherwise noted)Parameter Symbol Value UnitVCBOCollector-Base Voltage 60 VVCEOCollector-Emitter Voltage 50 VVEBOEmitter-Base Voltage 5 VICCollector Current -Continuous 150 mA1. BASECollector Power Dissipation PC 150 mW2. E

8.38. 2sc2714.pdf Size:213K _cn_hottech

Plastic-Encapsulate TransistorsFEATURES(NPN)2SC2714Small reverse Transfer Capacitance:Cre=0.7pF(typ.)Low Noise Figure:NF=2.5dB(typ.) (f=100MHz)MAXIMUM RATINGS (TA=25 unless otherwise noted)Parameter Symbol Value UnitVCBOCollector-Base Voltage 40 VVCEOCollector-Emitter Voltage 30 VVEBOEmitter-Base Voltage 4 VICCollector Current -Continuous 20 mA1. BASECollector

8.39. 2sc2712.pdf Size:206K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2712DESCRIPTIONWith SOT-23 packagingHigh collector-base voltageHigh power dissipationLow saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 50 VCBO

8.40. 2sc2716.pdf Size:216K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2716 DESCRIPTION High Power Gain- : Gp12dB,f= 27MHz, PO= 16W High Reliability APPLICATIONS Designed for RF power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 30 V VEBO Emit

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