2SC2720 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2720
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: TO92
2SC2720 Transistor Equivalent Substitute - Cross-Reference Search
2SC2720 Datasheet (PDF)
4.1. 2sc2721.pdf 
Size:107K _nec
DATA SHEET SILICON TRANSISTOR 2SC2721 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-FREQUENCY AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) Complementary transistor with 2SA1154 High PT in small dimension and high voltage PT = 1 W, VCEO = 60 V ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collect
5.1. 2sc2712-bl.pdf Size:241K _update
2SC2712-O MCC Micro Commercial Components TM 2SC2712-Y 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2712-GR CA 91311 Phone: (818) 701-4933 2SC2712-BL Fax: (818) 701-4939 Features NPN • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate • Complementary to 2SA1162 • Epoxy meets UL 94 V-
5.2. 2sc2712-gr.pdf Size:241K _update
2SC2712-O MCC Micro Commercial Components TM 2SC2712-Y 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2712-GR CA 91311 Phone: (818) 701-4933 2SC2712-BL Fax: (818) 701-4939 Features NPN • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate • Complementary to 2SA1162 • Epoxy meets UL 94 V-
5.3. 2sc2712lt1.pdf Size:137K _update
2SC2712LT1 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. * High Voltage and High Current: Vceo=50V,Ic=150mA(Max.) Package:SOT-23 * Excellent hFE Linearity: hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.) * High hFE: hFE=70-700 * Low Noise: NF=1dB(Typ.),10dB(Max.) * Complementary to 2SA1162 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic
5.4. 2sc2712-o.pdf Size:241K _update
2SC2712-O MCC Micro Commercial Components TM 2SC2712-Y 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2712-GR CA 91311 Phone: (818) 701-4933 2SC2712-BL Fax: (818) 701-4939 Features NPN • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate • Complementary to 2SA1162 • Epoxy meets UL 94 V-
5.5. 2sc2712-y.pdf Size:241K _update
2SC2712-O MCC Micro Commercial Components TM 2SC2712-Y 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2712-GR CA 91311 Phone: (818) 701-4933 2SC2712-BL Fax: (818) 701-4939 Features NPN • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate • Complementary to 2SA1162 • Epoxy meets UL 94 V-
5.6. 2sc2793.pdf Size:211K _toshiba
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
5.7. 2sc2712.pdf Size:264K _toshiba
2SC2712 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2712 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 70~700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to
5.8. 2sc2753.pdf Size:307K _toshiba
2SC2753 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2753 VHF~UHF Band Low Noise Amplifier Application Unit: mm • Low noise figure, high gain • NF = 1.5dB, |S |2 = 16dB (f = 500 MHz) 21e • NF = 1.7dB, |S |2 = 10.5dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 17 V Collector-emitter v
5.9. 2sc2715.pdf Size:333K _toshiba
2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2715 High Frequency Amplifier Applications Unit: mm • High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz) • Recommended for FM IF, OSC stage and AM CONV. IF stage. Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCE
5.10. 2sc2714.pdf Size:510K _toshiba
2SC2714 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2714 High Frequency Amplifier Applications Unit: mm FM, RF, MIX,IF Amplifier Applications • Small reverse transfer capacitance: Cre = 0.7 pF (typ.) • Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage
5.11. 2sc2716.pdf Size:333K _toshiba
2SC2716 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2716 High Frequency Amplifier Applications Unit: mm AM High Frequency Amplifier Applications AM Frequency Converter Applications • Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter v
5.12. 2sc2783.pdf Size:117K _toshiba
5.13. 2sc2216 2sc2717.pdf Size:267K _toshiba
2SC2216,2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2216,2SC2717 TV Final Picture IF Amplifier Applications Unit: mm • High gain: Gpe = 33dB (typ.) (f = 45 MHz) • Good linearity of h . FE Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit 2SC2216 50 Collector-base voltage VCBO V 2SC2717 30 2SC2216 45 Collector-emitter VCEO
5.14. 2sc2791.pdf Size:105K _toshiba
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
5.15. 2sc2792.pdf Size:185K _toshiba
5.16. 2sc2790.pdf Size:298K _toshiba
5.17. 2sc2713.pdf Size:327K _toshiba
2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2713 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C • High h h = 200~700 FE: FE • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1163 • Small package
5.18. 2sc2710.pdf Size:205K _toshiba
2SC2710 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2710 For Audio Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 100~320 • Complementary to 2SA1150 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector cur
5.19. 2sc2705.pdf Size:125K _toshiba
2SC2705 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2705 Audio Frequency Amplifier Applications Unit: mm • Small collector output capacitance: C = 1.8 pF (typ.) ob • High transition frequency: fT = 200 MHz (typ.) • Complementary to 2SA1145. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-em
5.20. 2sc2782.pdf Size:137K _toshiba
2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm Output Power : Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 36 V Collector-Emitter Voltage VCEO 16 V Emitter-Base Voltage VEBO 4 V Collector Current IC 20 A
5.21. 2sc2703.pdf Size:173K _toshiba
5.22. 2sc2780.pdf Size:209K _nec
5.23. 2sc2786.pdf Size:286K _nec
5.24. 2sc2784.pdf Size:185K _nec
5.25. 2sc2787.pdf Size:228K _nec
5.26. 2sc2785.pdf Size:281K _nec
5.27. 2sc2752.pdf Size:188K _nec
5.28. 2sc2778 e.pdf Size:60K _panasonic
Transistor 2SC2778 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Absolute Maxi
5.29. 2sc2778.pdf Size:56K _panasonic
Transistor 2SC2778 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Absolute Maxi
5.30. 2sc2712.pdf Size:201K _utc
UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise Lead-free: 2SC2712L Halogen-free:2SC2712G ORDERING INFORMATION Ordering Number Pin Assignment Package Pack
5.31. 2sc2768.pdf Size:105K _fuji
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
5.32. 2sc2731.pdf Size:36K _hitachi
5.33. 2sc2735.pdf Size:46K _hitachi
2SC2735 Silicon NPN Epitaxial Application UHF/VHF Local oscillator, frequency converter Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC2735 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 150 mW
5.34. 2sc2776.pdf Size:24K _hitachi
2SC2776 Silicon NPN Epitaxial Planar Application VHF amplifier Mixer, Local oscillator Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC2776 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 4V Collector current IC 30 mA Collector power dissipation PC 10
5.35. 2sc2734.pdf Size:49K _hitachi
2SC2734 Silicon NPN Epitaxial Application UHF frequency converter Local oscillator, wide band amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC2734 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power
5.36. 2sc2736.pdf Size:55K _hitachi
2SC2736 Silicon NPN Epitaxial Application UHF/VHF frequency converter Local oscillator Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC2736 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 15
5.37. 2sc2732.pdf Size:36K _hitachi
2SC2732 Silicon NPN Epitaxial Application UHF frequency converter Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC2732 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 4V Collector current IC 20 mA Collector power dissipation PC 150 mW Junction temperature
5.38. 2sc2740.pdf Size:67K _no
5.39. 2sc2738.pdf Size:78K _no
5.40. 2sc2750.pdf Size:200K _no
5.41. 2sc2712.pdf Size:368K _secos
2SC2712 0.15A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE Low Noise: NF=1dB(Typ.), 10db(Max.) A L Complements of the 2SA1162 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL Range 70~140 120~240 200~4
5.42. 2sc2714.pdf Size:704K _secos
2SC2714 0.02A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES ? Small reverse Transfer Capacitance:Cre=0.7pF(typ.) A L ? Low Noise Figure:NF=2.5dB(typ.)(f=100MHz) 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SC2714-R 2SC2714-O 2SC2714-Y Rang
5.43. 2sc2717.pdf Size:172K _secos
2SC2717 0.05A , 30V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? High Gain:Gpe=33 dB(Typ.)(f =45MHz) G H ? Good Linearity of hFE ?Base ?Emitter J ?Collector A D Millimeter REF. Min. Max. B A 4.40 4.70 B 4.30 4.70 K C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.
5.44. 2sc2774.pdf Size:165K _jmnic
JMnic Product Specification Silicon NPN Power Transistors 2SC2774 DESCRIPTION ·With MT-200 package ·High power dissipation ·High current capability APPLICATIONS ·For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolut
5.45. 2sc2768.pdf Size:221K _jmnic
JMnic Product Specification Silicon NPN Power Transistors 2SC2768 DESCRIPTION · ·With TO-220C package ·High speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ra
5.46. 2sc2767.pdf Size:219K _jmnic
JMnic Product Specification Silicon NPN Power Transistors 2SC2767 DESCRIPTION · ·With TO-220C package ·High speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ra
5.47. 2sc2792.pdf Size:200K _jmnic
JMnic Product Specification Silicon NPN Power Transistors 2SC2792 DESCRIPTION ·With TO-3P(I) package ·High breakdown voltage ·Excellent switching times APPLICATIONS ·Switching regulator and high voltage ·Switching applications ·High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline
5.48. 2sc2773.pdf Size:191K _jmnic
JMnic Product Specification Silicon NPN Power Transistors 2SC2773 DESCRIPTION · ·With MT-200 package ·High current capability APPLICATIONS ·For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=25?)
5.49. 2sc2793.pdf Size:147K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2793 DESCRIPTION · ·With MT-200 package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·High speed and high voltage switching ·Switching regulator ·High speed DC-DC converter PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fi
5.50. 2sc2740.pdf Size:145K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2740 DESCRIPTION ·With TO-3PN package ·High speed switching ·High VCBO ·Low saturation voltage APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter ABSOLUTE MAXI
5.51. 2sc2707.pdf Size:224K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2707 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min.) ·High Power Dissipation ·Complement to Type 2SA1147 APPLICATIONS ·Designed for power switching amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Colle
5.52. 2sc2774.pdf Size:135K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2774 DESCRIPTION Ў¤ With MT-200 package Ў¤ High power dissipation Ў¤ High current capability APPLICATIONS Ў¤ For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTI
5.53. 2sc2738.pdf Size:57K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2738 DESCRIPTION · ·With TO-220C package ·High speed switching ·High VCBO ·Low saturation voltage APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDI
5.54. 2sc2735.pdf Size:141K _inchange_semiconductor
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2735 DESCRIPTION ·Low Noise ·High Gain APPLICATIONS ·Designed for use in UHF ~ VHF local oscillator, frequency converter. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC C
5.55. 2sc2716.pdf Size:216K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2716 DESCRIPTION ·High Power Gain- : Gp?12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for RF power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Bas
5.56. 2sc2734.pdf Size:135K _inchange_semiconductor
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2734 DESCRIPTION ·Low Noise ·High Gain APPLICATIONS ·UHF frequency converter ·Local oscillator , wide band amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 11 V VEBO Emitter-Base Voltage 3 V IC Collec
5.57. 2sc2751.pdf Size:124K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2751 DESCRIPTION Ў¤ With TO-3N package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ For use in high voltage ,high speed and power switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMB
5.58. 2sc2768.pdf Size:186K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2768 DESCRIPTION Ў¤ With TO-220C package Ў¤ High speed switching Ў¤ High reliability APPLICATIONS Ў¤ Switching regulators Ў¤ Ultrasonic generators Ў¤ High frequency inverters Ў¤ General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
5.59. 2sc2750.pdf Size:279K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2750 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High Current Capability ·High Power Dissipation APPLICATIONS ·Designed for high speed, high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Colle
5.60. 2sc2767.pdf Size:184K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2767 DESCRIPTION Ў¤ With TO-220C package Ў¤ High speed switching Ў¤ High reliability APPLICATIONS Ў¤ Switching regulators Ў¤ Ultrasonic generators Ў¤ High frequency inverters Ў¤ General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
5.61. 2sc2788.pdf Size:145K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2788 DESCRIPTION ·With TO-3PN package ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitt
5.62. 2sc2736.pdf Size:149K _inchange_semiconductor
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2736 DESCRIPTION ·Low Noise ·High Gain APPLICATIONS ·Designed for use in UHF~ VHF local oscillator, frequency converter. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Co
5.63. 2sc2739.pdf Size:57K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2739 DESCRIPTION · ·With TO-220C package ·High speed switching ·High VCBO ·Low saturation voltage APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDI
5.64. 2sc2791.pdf Size:128K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2791 DESCRIPTION ·With TO-3 package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·High speed and high voltage switching ·Switching regulator ·High speed DC-DC converter PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symb
5.65. 2sc2769.pdf Size:264K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2769 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid state relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALU
5.66. 2sc2792.pdf Size:166K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3P(I) package Ў¤ High breakdown voltage Ў¤ Excellent switching times APPLICATIONS Ў¤ Switching regulator and high voltage Ў¤ Switching applications Ў¤ High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC2792
5.67. 2sc2749.pdf Size:143K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2749 DESCRIPTION ·With TO-3PN package ·High speed switching ·High VCBO ·Low saturation voltage APPLICATIONS ·For high voltage,high speed power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3
5.68. 2sc2757.pdf Size:70K _inchange_semiconductor
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2757 DESCRIPTION ·Low Noise ·High Current-Gain Bandwidth Product APPLICATIONS ·Designed for use in VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base V
5.69. 2sc2706.pdf Size:115K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2706 DESCRIPTION Ў¤ With TO-3P(I) package Ў¤ High power dissipation APPLICATIONS Ў¤ For audio power amplifier and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25
5.70. 2sc2761.pdf Size:127K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2761 DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PA
5.71. 2sc2794.pdf Size:112K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2794 DESCRIPTION · ·With TO-126 package ·Low collector saturation voltage APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UN
5.72. 2sc2752.pdf Size:122K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2752 DESCRIPTION Ў¤ With TO-126 package Ў¤ High breakdown voltage Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Low power switching regulator Ў¤ DC-DC converter Ў¤ High voltage switch PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings
5.73. 2sc2773.pdf Size:135K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2773 DESCRIPTION Ў¤ With MT-200 package Ў¤ High current capability APPLICATIONS Ў¤ For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Ў¤ Absolute maxim
5.74. 2sc2712.pdf Size:732K _htsemi
2SC2712 SOT-23 TRANSISTOR (NPN) 1. BASE FEATURE 2. EMITTER · Low Noise: NF=1 dB (Typ),10dB(MAX) 3. COLLECTOR · Complementary to 2SA1162 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Pow
5.75. 2sc2715.pdf Size:1110K _htsemi
2SC2715 SOT-23 TRANSISTOR (NPN) FEATURES 1. BASE 2. EMITTER High Power Gain 3. COLLECTOR Recommended for FM IF,OSC Stage and AM CONV. IF Stage. MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA PC Collec
5.76. 2sc2714.pdf Size:466K _htsemi
2SC2714 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER Small reverse Transfer Capacitance:Cre=0.7pF(typ.) 3. COLLECTOR Low Noise Figure:NF=2.5dB(typ.) (f=100MHz) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Contin
5.77. 2sc2712.pdf Size:274K _gsme
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM2712 MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic ???? Symbol ?? Rating ??? Unit ?? Collector-Emitter Voltage VCEO 50 Vdc ???-????? Collector-Base Voltage VCBO 60 Vdc ???-???? Emitter-Base Voltage VEBO 5.0 V
5.78. 2sc2712 sot-23.pdf Size:201K _lge
2SC2712 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low Noise: NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collector C
5.79. 2sc2703 to-92mod.pdf Size:216K _lge
2SC2703 TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE 5.800 6.200 Features 8.400 High DC Current Gain: hFE=100-320 8.800 0.900 1.100 0.400 0.600 13.800 14.200 1.500 TYP 2.900 Dimensions in inches and (millimeters) 3.100 MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.000 1.600 Symbol Parameter 0.380 Value Units 0.400 4.700 C
5.80. 2sc2703 to-92l.pdf Size:195K _lge
2SC2703 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.700 1 5.100 Features 7.800 High DC Current Gain: hFE=100-320 8.200 0.600 0.800 0.350 0.550 13.800 14.200 Dimensions in inches and (millimeters) 1.270 TYP MAXIMUM RATINGS (TA=25? unless otherwise noted) 2.440 2.640 Symbol Parameter 0.000 Value Units 1.600 0.300 0.350 Collector-Base Vo
5.81. 2sc2715.pdf Size:317K _lge
2SC2715 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High Power Gain: Gpe=2dB(Typ.)(f=10.7MHz) Recommended for FM IF,OSC Stage and AM CONV. IF Stage. MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitte
5.82. 2sc2714.pdf Size:298K _lge
2SC2714 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Small reverse Transfer Capacitance:Cre=0.7pF(typ.) Low Noise Figure:NF=2.5dB(typ.) (f=100MHz) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V Dimensions in inches and (millimeters) VEBO Emitter-Base
5.83. 2sc2785.pdf Size:494K _lge
2SC2785 TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 3. BASE 1 2 3 Features High voltage VCEO:50V Excellent hFE Linearity:0.92 TYP hFE1 (0.1mA)/ hFE2 (1mA) Complementary to 2SA1175 PNP transistor MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Value Units Parameter VCBO 60 V Collector-Base Voltage VCEO Collector-Emitter Voltage 50 V VEBO Emit
5.84. 2sc2717.pdf Size:298K _lge
2SC2717(NPN) TO-92 Bipolar Transistors TO-92 1. BASE 2. EMITTER 3. COLLECTOR Features High Gain: Gpe =33 dB ( Typ. ) ( f =45MHZ) Good Linearity of hFE. MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 4 V IC C
5.85. 2sc2714.pdf Size:664K _wietron
2SC2714 NPN General Purpose Transistors P b Lead(Pb)-Free SOT-23 ELECTRICAL CHARACTERISTICS(Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO V Ic=10?A,IE=0 40 Collector-emitter breakdown voltage V(BR)CEO V Ic=1mA,IB=0 30 Emitter-base breakdown voltage V(BR)EBO IE=10?A,IC=0 4 V Collector cut-off current
5.86. 2sc2717m.pdf Size:923K _blue-rocket-elect
2SC2717M(BR3DG2717M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 增益高,h 线性好。 FE High gain, good linearity of hFE. 用途 / Applications 用于电视末级图象放大。 TV final picture IF amplifier applications. 内部等效电路 / Equival
5.87. 2sc2712.pdf Size:1048K _kexin
SMD Type Transistors NPN Transistors 2SC2712 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features High voltage and high current: VCEO = 50 V, IC = 150 mA (max) 1 2 Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 High hFE: hFE = 70 700 Low noise: NF = 1dB (typ.), 10dB (max) 1.Base 2.Emitter 3.collector
5.88. 2sc2780.pdf Size:1171K _kexin
SMD Type Transistors NPN Transistors 2SC2780 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=50mA ● Collector Emitter Voltage VCEO=140V ● Complementary to 2SA1173 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 140 Collector - Emitter Voltage VCEO
5.89. 2sc2715.pdf Size:1522K _kexin
SMD Type Transistors NPN Transistors 2SC2715 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=30V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Colle
5.90. 2sc2714.pdf Size:1075K _kexin
SMD Type Transistors NPN Transistors 2SC2714 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=20mA 1 2 ● Collector Emitter Voltage VCEO=30V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Colle
5.91. 2sc2735.pdf Size:793K _kexin
SMD Type Transistors NPN Transistors 2SC2735 SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect
5.92. 2sc2716.pdf Size:1123K _kexin
SMD Type Transistors NPN Transistors 2SC2716 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=100mA 1 2 ● Collector Emitter Voltage VCEO=30V +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collect
5.93. 2sc2776.pdf Size:350K _kexin
SMD Type Transistors NPN Transistors 2SC2776 SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 ■ Features ● Collector Current Capability IC=30mA 1 2 ● Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect
5.94. 2sc2734.pdf Size:1034K _kexin
SMD Type Transistors NPN Transistors 2SC2734 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=50mA ● Collector Emitter Voltage VCEO=11V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle
5.95. 2sc2736.pdf Size:1028K _kexin
SMD Type Transistors NPN Transistors 2SC2736 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle
5.96. 2sc2732.pdf Size:724K _kexin
SMD Type Transistors NPN Transistors 2SC2732 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=20mA 1 2 ● Collector Emitter Voltage VCEO=25V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect
5.97. 2sc2757.pdf Size:338K _kexin
SMD Type Transistors NPN Transistors 2SC2757 SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collec
5.98. 2sc2778.pdf Size:1068K _kexin
SMD Type Transistors NPN Transistors 2SC2778 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=30mA 1 2 ● Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle
5.99. 2sc2713.pdf Size:1438K _kexin
SMD Type Transistors NPN Transistors 2SC2713 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 ■ Features 3 ● High voltage: VCEO = 120 V ● High hFE: hFE = 200~700 ● Low noise: NF = 1dB (typ.), 10dB (max) 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 ● Small package 1.9+0.1 -0.1 ● Complementary to 2SA1163 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃
Datasheet: 2SC2716 , 2SC2716O , 2SC2716R , 2SC2716Y , 2SC2717 , 2SC2718 , 2SC2719 , 2SC272 , 2N2222A , 2SC2721 , 2SC2722 , 2SC2723 , 2SC2724 , 2SC2725 , 2SC2726 , 2SC2727 , 2SC2728 .
