2SC2720 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC2720

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 3.5 pF

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: TO92

2SC2720 Transistor Equivalent Substitute - Cross-Reference Search

2SC2720 Datasheet (PDF)

4.1. 2sc2721.pdf Size:107K _nec

DATA SHEET SILICON TRANSISTOR 2SC2721 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-FREQUENCY AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) • Complementary transistor with 2SA1154 • High PT in small dimension and high voltage PT = 1 W, VCEO = 60 V ABSOLUTE MAXIMUM RATINGS (Ta = 25° °C) ° ° Parameter Symbol Ratings Unit Collector to base voltage VCBO 60

4.2. 2sc2723.pdf Size:187K _inchange_semiconductor

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2723 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V = 400V(Min) (BR)CEO ·High Switching Speed ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLU

5.1. 2sc2712-bl.pdf Size:241K _update

2SC2712-O MCC Micro Commercial Components TM 2SC2712-Y 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2712-GR CA 91311 Phone: (818) 701-4933 2SC2712-BL Fax: (818) 701-4939 Features NPN • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate • Complementary to 2SA1162 • Epoxy meets UL 94 V-

5.2. 2sc2712-gr.pdf Size:241K _update

5.3. 2sc2712lt1.pdf Size:137K _update

2SC2712LT1 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. * High Voltage and High Current: Vceo=50V,Ic=150mA(Max.) Package:SOT-23 * Excellent hFE Linearity: hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.) * High hFE: hFE=70-700 * Low Noise: NF=1dB(Typ.),10dB(Max.) * Complementary to 2SA1162 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic

5.4. 2sc2712-o.pdf Size:241K _update

5.5. 2sc2712-y.pdf Size:241K _update

5.6. 2sc2793.pdf Size:211K _toshiba

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.7. 2sc2712.pdf Size:264K _toshiba

2SC2712 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2712 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 70~700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to

5.8. 2sc2753.pdf Size:307K _toshiba

2SC2753 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2753 VHF~UHF Band Low Noise Amplifier Application Unit: mm • Low noise figure, high gain • NF = 1.5dB, |S |2 = 16dB (f = 500 MHz) 21e • NF = 1.7dB, |S |2 = 10.5dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 17 V Collector-emitter v

5.9. 2sc2715.pdf Size:333K _toshiba

2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2715 High Frequency Amplifier Applications Unit: mm • High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz) • Recommended for FM IF, OSC stage and AM CONV. IF stage. Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCE

5.10. 2sc2714.pdf Size:510K _toshiba

2SC2714 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2714 High Frequency Amplifier Applications Unit: mm FM, RF, MIX,IF Amplifier Applications • Small reverse transfer capacitance: Cre = 0.7 pF (typ.) • Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage

5.11. 2sc2716.pdf Size:333K _toshiba

2SC2716 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2716 High Frequency Amplifier Applications Unit: mm AM High Frequency Amplifier Applications AM Frequency Converter Applications • Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter v

5.12. 2sc2783.pdf Size:117K _toshiba

5.13. 2sc2216 2sc2717.pdf Size:267K _toshiba

2SC2216,2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2216,2SC2717 TV Final Picture IF Amplifier Applications Unit: mm • High gain: Gpe = 33dB (typ.) (f = 45 MHz) • Good linearity of h . FE Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit 2SC2216 50 Collector-base voltage VCBO V 2SC2717 30 2SC2216 45 Collector-emitter VCEO

5.14. 2sc2791.pdf Size:105K _toshiba

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.15. 2sc2792.pdf Size:185K _toshiba

5.16. 2sc2790.pdf Size:298K _toshiba

5.17. 2sc2713.pdf Size:327K _toshiba

2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2713 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C • High h h = 200~700 FE: FE • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1163 • Small package

5.18. 2sc2710.pdf Size:205K _toshiba

2SC2710 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2710 For Audio Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 100~320 • Complementary to 2SA1150 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector cur

5.19. 2sc2705.pdf Size:125K _toshiba

2SC2705 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2705 Audio Frequency Amplifier Applications Unit: mm • Small collector output capacitance: C = 1.8 pF (typ.) ob • High transition frequency: fT = 200 MHz (typ.) • Complementary to 2SA1145. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-em

5.20. 2sc2782.pdf Size:137K _toshiba

2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm Output Power : Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 36 V Collector-Emitter Voltage VCEO 16 V Emitter-Base Voltage VEBO 4 V Collector Current IC 20 A

5.21. 2sc2703.pdf Size:173K _toshiba

5.22. 2sc2780.pdf Size:209K _nec

5.23. 2sc2786.pdf Size:286K _nec

5.24. 2sc2784.pdf Size:185K _nec

5.25. 2sc2787.pdf Size:228K _nec

5.26. 2sc2785.pdf Size:281K _nec

5.27. 2sc2752.pdf Size:188K _nec

5.28. 2sc2712-bl.pdf Size:241K _mcc

5.29. 2sc2712-gr.pdf Size:241K _mcc

5.30. 2sc2712-o.pdf Size:241K _mcc

5.31. 2sc2712-y.pdf Size:241K _mcc

5.32. 2sc2778 e.pdf Size:60K _panasonic

Transistor 2SC2778 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm +0.2 2.8 –0.3 +0.25 0.65± 0.15 1.5 –0.05 0.65± 0.15 Features Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Abso

5.33. 2sc2778.pdf Size:56K _panasonic

5.34. 2sc2712.pdf Size:201K _utc

UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise Lead-free: 2SC2712L Halogen-free:2SC2712G ORDERING INFORMATION Ordering Number Pin Assignment Package P

5.35. 2sc2768.pdf Size:105K _fuji

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

5.36. 2sc2731.pdf Size:36K _hitachi

5.37. 2sc2735.pdf Size:46K _hitachi

2SC2735 Silicon NPN Epitaxial Application UHF/VHF Local oscillator, frequency converter Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC2735 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 15

5.38. 2sc2776.pdf Size:24K _hitachi

2SC2776 Silicon NPN Epitaxial Planar Application • VHF amplifier • Mixer, Local oscillator Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC2776 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 4V Collector current IC 30 mA Collector power dissipati

5.39. 2sc2734.pdf Size:49K _hitachi

2SC2734 Silicon NPN Epitaxial Application • UHF frequency converter • Local oscillator, wide band amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC2734 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collecto

5.40. 2sc2736.pdf Size:55K _hitachi

2SC2736 Silicon NPN Epitaxial Application • UHF/VHF frequency converter • Local oscillator Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC2736 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipati

5.41. 2sc2732.pdf Size:36K _hitachi

2SC2732 Silicon NPN Epitaxial Application UHF frequency converter Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC2732 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 4V Collector current IC 20 mA Collector power dissipation PC 150 mW Junction tempera

5.42. 2sc2740.pdf Size:67K _no

5.43. 2sc2738.pdf Size:78K _no

5.44. 2sc2750.pdf Size:200K _no

5.45. 2sc2712.pdf Size:368K _secos

2SC2712 0.15A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE Low Noise: NF=1dB(Typ.), 10db(Max.) A L Complements of the 2SA1162 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL Range 70~140 120~240 20

5.46. 2sc2714.pdf Size:704K _secos

2SC2714 0.02A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Small reverse Transfer Capacitance：Cre=0.7pF(typ.) A L  Low Noise Figure：NF=2.5dB(typ.)(f=100MHz) 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SC2714-R 2SC2714-O 2SC2

5.47. 2sc2717.pdf Size:172K _secos

2SC2717 0.05A , 30V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  High Gain：Gpe=33 dB(Typ.)(f =45MHz) G H  Good Linearity of hFE Base Emitter J Collector A D Millimeter REF. Min. Max. B A 4.40 4.70 B 4.30 4.70 K C 12.70 - D 3.30 3.81 E

5.48. 2sc2774.pdf Size:165K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC2774 DESCRIPTION ·With MT-200 package ·High power dissipation ·High current capability APPLICATIONS ·For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Abso

5.49. 2sc2768.pdf Size:221K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC2768 DESCRIPTION · ·With TO-220C package ·High speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum

5.50. 2sc2767.pdf Size:219K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC2767 DESCRIPTION · ·With TO-220C package ·High speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum

5.51. 2sc2792.pdf Size:200K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC2792 DESCRIPTION ·With TO-3P(I) package ·High breakdown voltage ·Excellent switching times APPLICATIONS ·Switching regulator and high voltage ·Switching applications ·High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outli

5.52. 2sc2773.pdf Size:191K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC2773 DESCRIPTION · ·With MT-200 package ·High current capability APPLICATIONS ·For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=2

5.53. 2sc2793.pdf Size:189K _inchange_semiconductor

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2793 DESCRIPTION · ·With MT-200 package ·High power dissipation ·High current capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·High speed and high voltage switching applications ·Switching regulator applications ·High speed DC-DC con

5.54. 2sc2712.pdf Size:206K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2712 DESCRIPTION ·With SOT-23 packaging ·High collector-base voltage ·High power dissipation ·Low saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 50 V CBO

5.55. 2sc2740.pdf Size:217K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2740 DESCRIPTION ·Collector-Emitter Sustaining Voltage- :V = 400V(Min) CEO(SUS) ·High Speed Switching ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE U

5.56. 2sc2707.pdf Size:189K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2707 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 180V(Min.) (BR)CEO ·High Power Dissipation ·Complement to Type 2SA1147 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SY

5.57. 2sc2774.pdf Size:223K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2774 DESCRIPTION · With MT-200 package ·High power dissipation ·High current capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Design for audio power amplifier and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 2

5.58. 2sc2738.pdf Size:195K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2738 DESCRIPTION ·Collector-Emitter Sustaining Voltage- :V = 400V(Min) CEO(SUS) ·High Speed Switching ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier, switching regulators, inverters, solenoid and relay drivers applications. ABSOLU

5.59. 2sc2735.pdf Size:179K _inchange_semiconductor

INCHANGE Semiconductor isc Silicon NPN Transistor 2SC2735 DESCRIPTION ·Silicon NPN epitaxial type ·Local oscillator wide band amplifier ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in UHF/VHF frequency converters ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collec

5.60. 2sc2716.pdf Size:216K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2716 DESCRIPTION ·High Power Gain- : Gp≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for RF power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 30 V VEBO Emit

5.61. 2sc2734.pdf Size:180K _inchange_semiconductor

INCHANGE Semiconductor isc Silicon NPN Transistor 2SC2734 DESCRIPTION ·Silicon NPN epitaxial type ·Local oscillator wide band amplifier ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in UHF frequency converters ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-

5.62. 2sc2751.pdf Size:216K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2751 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 400V(Min) CEO(SUS) ·High Current Capability ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMB

5.63. 2sc2768.pdf Size:195K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2768 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : V = 200V(Min) CEO(SUS) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MA

5.64. 2sc2750.pdf Size:203K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2750 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 100V(Min) CEO(SUS) ·High Current Capability ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMB

5.65. 2sc2767.pdf Size:194K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2767 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : V = 200V(Min) CEO(SUS) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MA

5.66. 2sc2788.pdf Size:200K _inchange_semiconductor

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2788 DESCRIPTION ·Low Collector Saturation Voltage ·Collector-Emitter Breakdown Voltage ·Good Linearity of h FE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulators applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a S

5.67. 2sc2736.pdf Size:180K _inchange_semiconductor

INCHANGE Semiconductor isc Silicon NPN Transistor 2SC2736 DESCRIPTION ·Silicon NPN epitaxial type ·Local oscillator wide band amplifier ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in UHF/VHF frequency converters ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collec

5.68. 2sc2739.pdf Size:214K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2739 DESCRIPTION ·Collector-Emitter Sustaining Voltage- :V = 400V(Min) CEO(SUS) ·High Speed Switching ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier, switching regulators, inverters, solenoid and relay drivers applications. ABSOLU

5.69. 2sc2791.pdf Size:189K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2791 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V = 800V(Min.) (BR)CEO ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed and high voltage switching applications ·Switching regulator applications ·High speed DC-DC converter applications ABSOLUTE MAX

5.70. 2sc2769.pdf Size:198K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2769 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V = 200V(Min) (BR)CEO ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid state relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T

5.71. 2sc2792.pdf Size:166K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2792 DESCRIPTION ·With TO-3P(I) package ·High breakdown voltage ·Excellent switching times APPLICATIONS ·Switching regulator and high voltage ·Switching applications ·High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1

5.72. 2sc2749.pdf Size:226K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2749 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 400V(Min) CEO(SUS) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching industrial use ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAME

5.73. 2sc2757.pdf Size:183K _inchange_semiconductor

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2757 DESCRIPTION ·Low Noise ·High Current-Gain Bandwidth Product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 30 V CBO

5.74. 2sc2705.pdf Size:200K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2705 DESCRIPTION ·Collector-Emitter sustaining Voltage : V =150V(Min) CEO ·Good Linearity of h FE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio Frequency Amplifier Applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150 V CBO V Coll

5.75. 2sc2706.pdf Size:202K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2706 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 140V(Min) (BR)CEO ·Complement to Type 2SA1146 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency low power amplifier applications ·Recommend for 70W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RA

5.76. 2sc2761.pdf Size:178K _inchange_semiconductor

isc Product Specification isc Silicon NPN Power Transistor 2SC2761 DESCRIPTION ·Excellent Safe Operating Area ·High voltage,high speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VAL

5.77. 2sc2794.pdf Size:191K _inchange_semiconductor

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2794 DESCRIPTION ·High breakdown voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SC2794 is suitable for low power switching regulator, DC-DC converter and high voltage switch. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE

5.78. 2sc2752.pdf Size:210K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2752 DESCRIPTION ·High breakdown voltage ·Complementary to 2SA1156 PNP transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SC2752 is suitable for low power switching regulator, DC-DC converter and high voltage switch. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYM

5.79. 2sc2773.pdf Size:194K _inchange_semiconductor

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2773 DESCRIPTION · ·With MT-200 package ·High power dissipation ·High current capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Design for audio power amplifier and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYM

5.80. 2sc2712.pdf Size:732K _htsemi

2SC2712 SOT-23 TRANSISTOR (NPN) 1. BASE FEATURE 2. EMITTER · Low Noise: NF=1 dB (Typ),10dB(MAX) 3. COLLECTOR · Complementary to 2SA1162 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collecto

5.81. 2sc2715.pdf Size:1110K _htsemi

2SC2715 SOT-23 TRANSISTOR (NPN) FEATURES 1. BASE 2. EMITTER High Power Gain 3. COLLECTOR Recommended for FM IF,OSC Stage and AM CONV. IF Stage. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA PC C

5.82. 2sc2714.pdf Size:466K _htsemi

2SC2714 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER Small reverse Transfer Capacitance:Cre=0.7pF(typ.) 3. COLLECTOR Low Noise Figure:NF=2.5dB(typ.) (f=100MHz) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -C

5.83. 2sc2712.pdf Size:274K _gsme

桂林斯壯微電子有限責任公司 Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM2712 MAXIMUM RATINGS ■MAXIMUM RATINGS 最大額定值 MAXIMUM RATINGS Characteristic 特性參數 Symbol 符號 Rating 額定值 Unit 單位 Collector-Emitter Voltage VCEO 50 Vdc 集電極-發射極電壓 C

5.84. 2sc2712 sot-23.pdf Size:201K _lge

2SC2712 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low Noise: NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collec

5.85. 2sc2703 to-92mod.pdf Size:216K _lge

2SC2703 TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE 5.800 6.200 Features 8.400 High DC Current Gain: hFE=100-320 8.800 0.900 1.100 0.400 0.600 13.800 14.200 1.500 TYP 2.900 Dimensions in inches and (millimeters) 3.100 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 0.000 1.600 Symbol Parameter 0.380 Value Units 0.400 4.7

5.86. 2sc2703 to-92l.pdf Size:195K _lge

2SC2703 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.700 1 5.100 Features 7.800 High DC Current Gain: hFE=100-320 8.200 0.600 0.800 0.350 0.550 13.800 14.200 Dimensions in inches and (millimeters) 1.270 TYP MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2.440 2.640 Symbol Parameter 0.000 Value Units 1.600 0.300 0.350 Collector-Ba

5.87. 2sc2715.pdf Size:317K _lge

2SC2715 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High Power Gain: Gpe=2dB(Typ.)(f=10.7MHz) Recommended for FM IF,OSC Stage and AM CONV. IF Stage. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO E

5.88. 2sc2714.pdf Size:298K _lge

2SC2714 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Small reverse Transfer Capacitance:Cre=0.7pF(typ.) Low Noise Figure:NF=2.5dB(typ.) (f=100MHz) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V Dimensions in inches and (millimeters) VEBO Emitter-

5.89. 2sc2785.pdf Size:494K _lge

2SC2785 TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 3. BASE 1 2 3 Features High voltage VCEO:50V Excellent hFE Linearity:0.92 TYP hFE1 (0.1mA)/ hFE2 (1mA) Complementary to 2SA1175 PNP transistor MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Value Units Parameter VCBO 60 V Collector-Base Voltage VCEO Collector-Emitter Voltage 50 V VEBO

5.90. 2sc2717.pdf Size:298K _lge

2SC2717(NPN) TO-92 Bipolar Transistors TO-92 1. BASE 2. EMITTER 3. COLLECTOR Features High Gain: Gpe =33 dB ( Typ. ) ( f =45MHZ) Good Linearity of hFE. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 4 V

5.91. 2sc2714.pdf Size:664K _wietron

2SC2714 NPN General Purpose Transistors P b Lead(Pb)-Free SOT-23 ELECTRICAL CHARACTERISTICS(Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO V Ic=10?A,IE=0 40 Collector-emitter breakdown voltage V(BR)CEO V Ic=1mA,IB=0 30 Emitter-base breakdown voltage V(BR)EBO IE=10?A,IC=0 4 V Collector cut-off current

5.92. 2sc2717m.pdf Size:923K _blue-rocket-elect

2SC2717M(BR3DG2717M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 增益高,h 线性好。 FE High gain, good linearity of hFE. 用途 / Applications 用于电视末级图象放大。 TV final picture IF amplifier applications. 内部等效电路 / Equival

5.93. 2sc2712.pdf Size:1048K _kexin

SMD Type Transistors NPN Transistors 2SC2712 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features High voltage and high current: VCEO = 50 V, IC = 150 mA (max) 1 2 Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 High hFE: hFE = 70 700 Low noise: NF = 1dB (typ.), 10dB (max) 1.Base 2.Emitter 3.collector

5.94. 2sc2780.pdf Size:1171K _kexin

SMD Type Transistors NPN Transistors 2SC2780 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=50mA ● Collector Emitter Voltage VCEO=140V ● Complementary to 2SA1173 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 140 Collector - Emitter Voltage VCEO

5.95. 2sc2715.pdf Size:1522K _kexin

SMD Type Transistors NPN Transistors 2SC2715 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=30V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Colle

5.96. 2sc2714.pdf Size:1075K _kexin

SMD Type Transistors NPN Transistors 2SC2714 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=20mA 1 2 ● Collector Emitter Voltage VCEO=30V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Colle

5.97. 2sc2735.pdf Size:793K _kexin

SMD Type Transistors NPN Transistors 2SC2735 SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

5.98. 2sc2716.pdf Size:1123K _kexin

SMD Type Transistors NPN Transistors 2SC2716 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=100mA 1 2 ● Collector Emitter Voltage VCEO=30V +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collect

5.99. 2sc2776.pdf Size:350K _kexin

SMD Type Transistors NPN Transistors 2SC2776 SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 ■ Features ● Collector Current Capability IC=30mA 1 2 ● Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

5.100. 2sc2734.pdf Size:1034K _kexin

SMD Type Transistors NPN Transistors 2SC2734 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=50mA ● Collector Emitter Voltage VCEO=11V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle

5.101. 2sc2736.pdf Size:1028K _kexin

SMD Type Transistors NPN Transistors 2SC2736 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle

5.102. 2sc2732.pdf Size:724K _kexin

SMD Type Transistors NPN Transistors 2SC2732 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=20mA 1 2 ● Collector Emitter Voltage VCEO=25V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

5.103. 2sc2757.pdf Size:338K _kexin

SMD Type Transistors NPN Transistors 2SC2757 SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collec

5.104. 2sc2778.pdf Size:1068K _kexin

SMD Type Transistors NPN Transistors 2SC2778 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=30mA 1 2 ● Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle

5.105. 2sc2713.pdf Size:1438K _kexin

SMD Type Transistors NPN Transistors 2SC2713 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 ■ Features 3 ● High voltage: VCEO = 120 V ● High hFE: hFE = 200~700 ● Low noise: NF = 1dB (typ.), 10dB (max) 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 ● Small package 1.9+0.1 -0.1 ● Complementary to 2SA1163 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃

5.106. 2sc2712lt1.pdf Size:137K _hfzt

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

LIST

Last Update

All Transistors. 2SC2720 Datasheet

2SC2720 Datasheet, Equivalent, Cross Reference Search

2SC2720 Datasheet (PDF)

LIST

Last Update

AllTransistors(C)