2SC2752R Specs and Replacement

Type Designator: 2SC2752R

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO126

 2SC2752R Substitution

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2SC2752R datasheet

 7.1. Size:188K  nec

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2SC2752R

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 7.2. Size:210K  inchange semiconductor

2sc2752.pdf pdf_icon

2SC2752R

isc Silicon NPN Power Transistor 2SC2752 DESCRIPTION High breakdown voltage Complementary to 2SA1156 PNP transistor 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SC2752 is suitable for low power switching regulator, DC-DC converter and high voltage switch. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒

 8.1. Size:307K  toshiba

2sc2753.pdf pdf_icon

2SC2752R

2SC2753 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2753 VHF UHF Band Low Noise Amplifier Application Unit mm Low noise figure, high gain NF = 1.5dB, S 2 = 16dB (f = 500 MHz) 21e NF = 1.7dB, S 2 = 10.5dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 17 V Collector-emitter v... See More ⇒

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2SC2752R

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Detailed specifications: 2SC2751A, 2SC2751N, 2SC2751O, 2SC2751R, 2SC2751Y, 2SC2752, 2SC2752N, 2SC2752O, A940, 2SC2752Y, 2SC2753, 2SC2754, 2SC2755, 2SC2755O, 2SC2755R, 2SC2755Y, 2SC2756

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