2SC2759R Specs and Replacement
Type Designator: 2SC2759R
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 14 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 1500 MHz
Collector Capacitance (Cc): 1.3 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO236
- BJT ⓘ Cross-Reference Search
2SC2759R datasheet
8.1. Size:307K toshiba
2sc2753.pdf 
2SC2753 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2753 VHF UHF Band Low Noise Amplifier Application Unit mm Low noise figure, high gain NF = 1.5dB, S 2 = 16dB (f = 500 MHz) 21e NF = 1.7dB, S 2 = 10.5dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 17 V Collector-emitter v... See More ⇒
8.4. Size:338K kexin
2sc2757.pdf
SMD Type Transistors NPN Transistors 2SC2757 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collec... See More ⇒
8.5. Size:1709K cn shikues
2sc2757.pdf
2SC2757 TRANSISTOR (NPN) FEATURES SOT-23 AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ) 1 BASE 2 EMITTER 3 COLLECTOR MARKING T33 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 ... See More ⇒
8.6. Size:210K inchange semiconductor
2sc2752.pdf
isc Silicon NPN Power Transistor 2SC2752 DESCRIPTION High breakdown voltage Complementary to 2SA1156 PNP transistor 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SC2752 is suitable for low power switching regulator, DC-DC converter and high voltage switch. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒
8.7. Size:203K inchange semiconductor
2sc2750.pdf
isc Silicon NPN Power Transistor 2SC2750 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) High Current Capability High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed, high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
8.8. Size:183K inchange semiconductor
2sc2757.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2757 DESCRIPTION Low Noise High Current-Gain Bandwidth Product Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 30 V CBO... See More ⇒
8.9. Size:216K inchange semiconductor
2sc2751.pdf
isc Silicon NPN Power Transistor 2SC2751 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Current Capability High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed, high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
Detailed specifications: 2SC2757T34, 2SC2757Y, 2SC2758, 2SC2758U12, 2SC2758U13, 2SC2758U14, 2SC2759, 2SC2759O, 2SC5198, 2SC2759U21, 2SC2759U22, 2SC2759U23, 2SC2759Y, 2SC2760, 2SC2761, 2SC2762, 2SC2763
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