2SC2762
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2762
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8
W
Maximum Collector-Base Voltage |Vcb|: 35
V
Maximum Emitter-Base Voltage |Veb|: 3
V
Maximum Collector Current |Ic max|: 0.4
A
Max. Operating Junction Temperature (Tj): 200
°C
Transition Frequency (ft): 500
MHz
Collector Capacitance (Cc): 2.5
pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package:
TO39
2SC2762
Transistor Equivalent Substitute - Cross-Reference Search
2SC2762
Datasheet (PDF)
8.1. Size:105K fuji
2sc2768.pdf 
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
8.2. Size:221K jmnic
2sc2768.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2768 DESCRIPTION With TO-220C package High speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum
8.3. Size:219K jmnic
2sc2767.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2767 DESCRIPTION With TO-220C package High speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum
8.4. Size:195K inchange semiconductor
2sc2768.pdf
isc Silicon NPN Power Transistor 2SC2768DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)High Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MA
8.5. Size:178K inchange semiconductor
2sc2761.pdf
isc Product Specificationisc Silicon NPN Power Transistor 2SC2761DESCRIPTIONExcellent Safe Operating AreaHigh voltage,high speed100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSConvertersInvertersSwitching regulatorsMotor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
8.6. Size:198K inchange semiconductor
2sc2769.pdf
isc Silicon NPN Power Transistor 2SC2769DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converterSolid state relayGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T
8.7. Size:194K inchange semiconductor
2sc2767.pdf
isc Silicon NPN Power Transistor 2SC2767DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)High Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MA
Datasheet: 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
