2SC2768A Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2768A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO220
2SC2768A Transistor Equivalent Substitute - Cross-Reference Search
2SC2768A Datasheet (PDF)
2sc2768.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sc2768.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2768 DESCRIPTION With TO-220C package High speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum
2sc2768.pdf
isc Silicon NPN Power Transistor 2SC2768DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)High Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MA
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N2907AL | ESM262 | 2N2917 | ET6060
History: 2N2907AL | ESM262 | 2N2917 | ET6060
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050