All Transistors. 2SC2776B Datasheet

 

2SC2776B Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC2776B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 160 MHz
   Collector Capacitance (Cc): 1.1 pF
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: TO236

 2SC2776B Transistor Equivalent Substitute - Cross-Reference Search

   

2SC2776B Datasheet (PDF)

 7.1. Size:24K  hitachi
2sc2776.pdf

2SC2776B
2SC2776B

2SC2776Silicon NPN Epitaxial PlanarApplication VHF amplifier Mixer, Local oscillatorOutlineMPAK311. Emitter2. Base23. Collector2SC2776Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 4VCollector current IC 30 mACollector power dissipati

 7.2. Size:350K  kexin
2sc2776.pdf

2SC2776B

SMD Type TransistorsNPN Transistors2SC2776SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

 8.1. Size:60K  panasonic
2sc2778 e.pdf

2SC2776B
2SC2776B

Transistor2SC2778Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/AM radios.1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazinepacking.2Abso

 8.2. Size:56K  panasonic
2sc2778.pdf

2SC2776B
2SC2776B

Transistor2SC2778Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/AM radios.1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazinepacking.2Abso

 8.3. Size:191K  jmnic
2sc2773.pdf

2SC2776B
2SC2776B

JMnic Product Specification Silicon NPN Power Transistors 2SC2773 DESCRIPTION With MT-200 package High current capability APPLICATIONS For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol3 EmitterAbsolute maximum ratings(Ta=2

 8.4. Size:165K  jmnic
2sc2774.pdf

2SC2776B
2SC2776B

JMnic Product Specification Silicon NPN Power Transistors 2SC2774 DESCRIPTION With MT-200 package High power dissipation High current capability APPLICATIONS For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol3 EmitterAbso

 8.5. Size:1068K  kexin
2sc2778.pdf

2SC2776B
2SC2776B

SMD Type TransistorsNPN Transistors2SC2778SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle

 8.6. Size:194K  inchange semiconductor
2sc2773.pdf

2SC2776B
2SC2776B

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2773DESCRIPTION With MT-200 packageHigh power dissipationHigh current capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesign for audio power amplifier and generalpurpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

 8.7. Size:223K  inchange semiconductor
2sc2774.pdf

2SC2776B
2SC2776B

isc Silicon NPN Power Transistor 2SC2774DESCRIPTION With MT-200 packageHigh power dissipationHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign for audio power amplifier and generalpurpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 2

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BDS10IG

 

 
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