2SC2776C Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2776C
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 160 MHz
Collector Capacitance (Cc): 1.1 pF
Forward Current Transfer Ratio (hFE), MIN: 170
Noise Figure, dB: -
Package: TO236
2SC2776C Transistor Equivalent Substitute - Cross-Reference Search
2SC2776C Datasheet (PDF)
2sc2776.pdf
2SC2776Silicon NPN Epitaxial PlanarApplication VHF amplifier Mixer, Local oscillatorOutlineMPAK311. Emitter2. Base23. Collector2SC2776Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 4VCollector current IC 30 mACollector power dissipati
2sc2776.pdf
SMD Type TransistorsNPN Transistors2SC2776SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect
2sc2778 e.pdf
Transistor2SC2778Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/AM radios.1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazinepacking.2Abso
2sc2778.pdf
Transistor2SC2778Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/AM radios.1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazinepacking.2Abso
2sc2773.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2773 DESCRIPTION With MT-200 package High current capability APPLICATIONS For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol3 EmitterAbsolute maximum ratings(Ta=2
2sc2774.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2774 DESCRIPTION With MT-200 package High power dissipation High current capability APPLICATIONS For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol3 EmitterAbso
2sc2778.pdf
SMD Type TransistorsNPN Transistors2SC2778SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle
2sc2773.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2773DESCRIPTION With MT-200 packageHigh power dissipationHigh current capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesign for audio power amplifier and generalpurpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM
2sc2774.pdf
isc Silicon NPN Power Transistor 2SC2774DESCRIPTION With MT-200 packageHigh power dissipationHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign for audio power amplifier and generalpurpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 2
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
