All Transistors. 2SC2792 Datasheet

 

2SC2792 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC2792
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 850 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO247

 2SC2792 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC2792 Datasheet (PDF)

 ..1. Size:185K  toshiba
2sc2792.pdf

2SC2792
2SC2792

 ..2. Size:200K  jmnic
2sc2792.pdf

2SC2792
2SC2792

JMnic Product Specification Silicon NPN Power Transistors 2SC2792 DESCRIPTION With TO-3P(I) package High breakdown voltage Excellent switching times APPLICATIONS Switching regulator and high voltage Switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outli

 ..3. Size:166K  inchange semiconductor
2sc2792.pdf

2SC2792
2SC2792

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2792 DESCRIPTION With TO-3P(I) package High breakdown voltage Excellent switching times APPLICATIONS Switching regulator and high voltage Switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1

 8.1. Size:105K  toshiba
2sc2791.pdf

2SC2792
2SC2792

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.2. Size:211K  toshiba
2sc2793.pdf

2SC2792
2SC2792

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.3. Size:298K  toshiba
2sc2790.pdf

2SC2792
2SC2792

 8.4. Size:189K  inchange semiconductor
2sc2791.pdf

2SC2792
2SC2792

isc Silicon NPN Power Transistor 2SC2791DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min.)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed and high voltage switching applicationsSwitching regulator applicationsHigh speed DC-DC converter applicationsABSOLUTE MAX

 8.5. Size:191K  inchange semiconductor
2sc2794.pdf

2SC2792
2SC2792

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2794DESCRIPTIONHigh breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SC2794 is suitable for low power switchingregulator, DC-DC converter and high voltageswitch.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 8.6. Size:189K  inchange semiconductor
2sc2793.pdf

2SC2792
2SC2792

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2793DESCRIPTION With MT-200 packageHigh power dissipationHigh current capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSHigh speed and high voltage switching applicationsSwitching regulator applicationsHigh speed DC-DC con

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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