All Transistors. 2SC2793 Datasheet

 

2SC2793 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC2793
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 900 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: MT-200

 2SC2793 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC2793 Datasheet (PDF)

 ..1. Size:211K  toshiba
2sc2793.pdf

2SC2793
2SC2793

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 ..2. Size:189K  inchange semiconductor
2sc2793.pdf

2SC2793
2SC2793

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2793DESCRIPTION With MT-200 packageHigh power dissipationHigh current capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSHigh speed and high voltage switching applicationsSwitching regulator applicationsHigh speed DC-DC con

 8.1. Size:105K  toshiba
2sc2791.pdf

2SC2793
2SC2793

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.2. Size:298K  toshiba
2sc2790.pdf

2SC2793
2SC2793

 8.3. Size:185K  toshiba
2sc2792.pdf

2SC2793
2SC2793

 8.4. Size:200K  jmnic
2sc2792.pdf

2SC2793
2SC2793

JMnic Product Specification Silicon NPN Power Transistors 2SC2792 DESCRIPTION With TO-3P(I) package High breakdown voltage Excellent switching times APPLICATIONS Switching regulator and high voltage Switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outli

 8.5. Size:189K  inchange semiconductor
2sc2791.pdf

2SC2793
2SC2793

isc Silicon NPN Power Transistor 2SC2791DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min.)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed and high voltage switching applicationsSwitching regulator applicationsHigh speed DC-DC converter applicationsABSOLUTE MAX

 8.6. Size:191K  inchange semiconductor
2sc2794.pdf

2SC2793
2SC2793

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2794DESCRIPTIONHigh breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SC2794 is suitable for low power switchingregulator, DC-DC converter and high voltageswitch.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 8.7. Size:166K  inchange semiconductor
2sc2792.pdf

2SC2793
2SC2793

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2792 DESCRIPTION With TO-3P(I) package High breakdown voltage Excellent switching times APPLICATIONS Switching regulator and high voltage Switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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