All Transistors. 2SC2812L4 Datasheet

 

2SC2812L4 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC2812L4

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 55 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 90

Noise Figure, dB: -

Package: TO236

2SC2812L4 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC2812L4 Datasheet (PDF)

3.1. 2sa1179n 2sc2812n.pdf Size:35K _sanyo

2SC2812L4
2SC2812L4

Ordering number : EN7198A 2SA1179N / 2SC2812N SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose 2SA1179N / 2SC2812N Amp Applications Features Miniature package facilitates miniaturization in end products. High breakdown voltage. Specifications ( ) : 2SA1179N Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions R

3.2. 2sc2812n.pdf Size:28K _sanyo

2SC2812L4
2SC2812L4

Ordering number : ENN7198 2SA1179N / 2SC2812N PNP / NPN Epitaxial Planar Silicon Transistors 2SA1179N / 2SC2812N Low-Frequency General-Purpose Amp Applications Features Package Dimensions Miniature package facilitates miniaturization in end unit : mm products. 2204 High breakdown voltage. [2SA1179N / 2SC2812N] 0.42 0.131 3 0 0.1 1 2 0.95 0.95 1.9 1 : Base 2.92 2 : Emitte

4.1. 2sc2814.pdf Size:144K _sanyo

2SC2812L4
2SC2812L4

Ordering number:EN693F NPN Epitaxial Planar Silicon Transistor 2SC2814 High-Friquency General-Purpose Amplifier Applications Features Package Dimensions Very small package enabiling compactness and unit:mm slimness of sets. 2018A High fT and small cre (fT=320MHz typ, cre=0.95pF [2SC2814] typ). C : Collector B : Base E : Emitter SANYO : CP Specifications Absolute Maximum Rat

4.2. 2sc2816.pdf Size:50K _hitachi

2SC2812L4
2SC2812L4

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

4.3. 2sc2810.pdf Size:145K _jmnic

2SC2812L4
2SC2812L4

JMnic Product Specification Silicon NPN Power Transistors 2SC2810 DESCRIPTION · ·With TO-220C package ·High voltage,High speed APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 5

4.4. 2sc2816.pdf Size:183K _jmnic

2SC2812L4
2SC2812L4

JMnic Product Specification Silicon NPN Power Transistors 2SC2816 DESCRIPTION · ·With TO-220C package ·High voltage ·High speed APPLICATIONS ·For high voltage ,high speed and high power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT V

4.5. 2sc2810.pdf Size:116K _inchange_semiconductor

2SC2812L4
2SC2812L4

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2810 DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage,High speed APPLICATIONS Ў¤ For power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER

4.6. 2sc2815.pdf Size:56K _inchange_semiconductor

2SC2812L4
2SC2812L4

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2815 DESCRIPTION · ·With TO-220C package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·For use in horizontal deflection output stages of TV’s and CTV’s circuits PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolut maximum

4.7. 2sc2816.pdf Size:149K _inchange_semiconductor

2SC2812L4
2SC2812L4

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2816 DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage Ў¤ High speed APPLICATIONS Ў¤ For high voltage ,high speed and high power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO V

Datasheet: 2SC2806 , 2SC2808 , 2SC2809 , 2SC280H , 2SC281 , 2SC2810 , 2SC2811 , 2SC2812 , BC109 , 2SC2812L5 , 2SC2812L6 , 2SC2812L7 , 2SC2813 , 2SC2813Q2 , 2SC2813Q3 , 2SC2813Q4 , 2SC2813Q5 .

 


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