2SC2845 Datasheet, Equivalent, Cross Reference Search

SMD Type TransistorsNPN Transistors2SC2845SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=70mA1 2 Collector Emitter Voltage VCEO=12V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collec

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2845 DESCRIPTION Low Noise High Gain High Current-Gain Bandwidth Product APPLICATIONS Designed for use in UHF low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base

isc Silicon NPN Power Transistor 2SC2841DESCRIPTIONHigh Breakdown Voltage-: V = 500V(Min)(BR)CBOHigh Switching SpeedLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C

2SC2883 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2883 Audio Frequency Amplifier Applications Unit: mm Suitable for output stage of 3 watts amplifier Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SA1203 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO

2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 100W PEP Power Gain : Gp = 13dB Collector Efficiency : C = 35% (Min.) Intermodulation Distortion: IMD = -24dB(Max.) (MIL Standard) MAXIMUM RATINGS

2SC2878 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC2878 For Muting and Switching Applications Unit: mm High emitter-base voltage: VEBO = 25 V (min) High reverse h : Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C Low on resistance: R = 1 (typ.) (I = 5 mA) ON BMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-b

2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2884 Audio Frequency Amplifier Applications Unit: mm High DC current gain: hFE = 100 to 320 Suitable for output stage of 1 watts amplifier Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1204 Maximum Ratings (Ta = 25C) Characteristics Symbol

2SC2873 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2873 Power Amplifier Applications Unit: mmPower Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching time: tstg = 1.0 s (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1213 Absolute

2SC2880 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC2880 High Voltage Switching Applications Unit: mm High voltage: VCEO = 150 V High transition frequency: f = 120 MHz T Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SA1200 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit

2SC2882 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2882 Power Amplifier Applications Unit: mm Voltage Amplifier Applications Suitable for driver of 30 to 35 watts audio amplifier Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SA1202 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit

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2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier Applications Unit: mmPower Amplifier Applications High voltage: VCEO = 120 V High transition frequency: fT = 120 MHz (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1201 Absolute Maximum Ratings (Ta = 25C) Cha

2SC2873 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SC2873 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High speed switching time: t = 1.0 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1213 Maxim

2SC2859 TOSHIBA Transistor Silicon NPN Epitaxial (PCT process) 2SC2859 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) Complementary to 2SA1182. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-

Ordering number:EN733DNPN Epitaxial Planar Silicon Transistor2SC2839HF Amplifier ApplicationsFeatures Package Dimensions Very small package enabiling compactness andunit:mmslimness of sets.2033 High fT and small cre (fT=320MHz typ, cre=0.95pF[2SC2839]typ).B : BaseC : CollectorE : EmitterSANYO : SPASpecificationsAbsolute Maximum Ratings at Ta = 25CPara

Ordering number : ENN71982SA1179N / 2SC2812NPNP / NPN Epitaxial Planar Silicon Transistors2SA1179N / 2SC2812NLow-Frequency General-PurposeAmp ApplicationsFeaturesPackage Dimensions Miniature package facilitates miniaturization in endunit : mmproducts.2204 High breakdown voltage.[2SA1179N / 2SC2812N]0.42 0.13130 0.11 20.95 0.951.91 : Base2.922

Ordering number:EN753CNPN Triple Diffused Planar Silicon Transistor2SC2857High-Voltage Driver ApplicationsApplications Package Dimensions Color TV vertical driver, sound driver applications. unit:mm2003AFeatures [2SC2857] High breakdown voltage (VCEO 180V) High collector dissipation (PC=500mW)JEDEC : TO-92 B : BaseEIAJ : SC-43 C : CollectorE : EmitterSANYO

Ordering number : EN7198A2SA1179N / 2SC2812NSANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon TransistorsLow-Frequency General-Purpose2SA1179N / 2SC2812NAmp ApplicationsFeatures Miniature package facilitates miniaturization in end products. High breakdown voltage.Specifications ( ) : 2SA1179NAbsolute Maximum Ratings at Ta=25CParameter Symbol Cond

Ordering number:EN693FNPN Epitaxial Planar Silicon Transistor2SC2814High-FriquencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Very small package enabiling compactness andunit:mmslimness of sets.2018A High fT and small cre (fT=320MHz typ, cre=0.95pF[2SC2814]typ).C : CollectorB : BaseE : EmitterSANYO : CPSpecificationsAbsolute Maximu

DATA SHEETSILICON TRANSISTORS2SC2885, 2946, 2946(1)NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-VOLTAGE HIGH-SPEED SWITCHINGThe 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a smallpackage (MP-3) which is suitable for high-density mounting. These transistors are ideal for drivers in DC/DCconverters and switching regulators.There are thr

MCC2SC2873-OTMMicro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC2873-YPhone: (818) 701-4933Fax: (818) 701-4939Features Low saturation voltage NPN Silicon High speed switching time Epitaxial Transistors Complementary to 2SA1213 Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth 2SC2883-OMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC2883-YFax: (818) 701-4939Features Power amplifier applications NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Power Transistors Epoxy meets UL 94 V-0 flammability

2SC2881-O/2SC2881-YElectrical Characteristics @ 25C Unless Otherwise SpecifiedParameter Symbol Min Typ Max Units ConditionsV(BR)CBO IC=1mA, IE=0Collector-Base Breakdown Voltage 120 VV(BR)CEO IC=10mA, IB=0Collector-Emitter Breakdown Voltage 120 VV(BR)EBO IE=1mA, IC=0Emitter-Base Breakdown Voltage 5.0 VICBO VCB=120V, IE=0Collector-Base Cutoff Current 0.1 AIEBO VEB=5V, I

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth 2SC2883-OMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC2883-YFax: (818) 701-4939Features Power amplifier applications NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Power Transistors Epoxy meets UL 94 V-0 flammability

MCC2SC2881-OMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SC2881-YPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN Silicon With SOT-89 package Power amplifier applications Power Transistors Epoxy meet

MCC2SC2881-OMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SC2881-YPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN Silicon With SOT-89 package Power amplifier applications Power Transistors Epoxy meet

MCC2SC2873-OTMMicro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC2873-YPhone: (818) 701-4933Fax: (818) 701-4939Features Low saturation voltage NPN Silicon High speed switching time Epitaxial Transistors Complementary to 2SA1213 Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See

Transistor2SC2851Silicon NPN epitaxial planer typeFor high-frequency power amplificationUnit: mm5.9 0.2 4.9 0.2FeaturesHigh transition frequency fT.Output of 0.6W is obtained in the VHF band (f = 175MHz).0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 36 VCollector to emitter voltage VCEO 16 V+0

2SC2855, 2SC2856Silicon NPN EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SA1190 and 2SA1191OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC2855, 2SC2856Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC2855 2SC2856 UnitCollector to base voltage VCBO 90 120 VCollector to emitter voltage VCEO 90 120 VEmitter to bas

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SC2853, 2SC2854Silicon NPN EpitaxialApplication Low frequency amplifier Complementary pair with 2SA1188 and 2SA1189OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC2853, 2SC2854Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC2853 2SC2854 UnitCollector to base voltage VCBO 90 120 VCollector to emitter voltage VCEO 90 120 VEmitter to base voltage

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SC2899Silicon NPN Triple DiffusedApplicationHigh speed and high voltage switchingOutlineTO-126 MOD1. Emitter2. Collector3. Base123Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 500 VCollector to emitter voltage VCEO 400 VEmitter to base voltage VEBO 10 VCollector current IC 0.5 ACollector peak current IC(peak) 1.0

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2SC2883 1.5 A , 30 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-89 Low Voltage. 412CLASSIFICATION OF hFE 3AECProduct-Rank 2SC2883-O 2SC2883-YRange 100~200 160~320B DMarking GO GYF GH KJ LPACKAGE INFORMATION Millimeter MillimeterREF. REF.

2SC2873NPN Silicon Elektronische BauelementeEpitaxial Planar TransistorRoHS Compliant ProductSOT-89FEATURES Low saturation voltage High speed switching time Complementary to 2SA1213 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V Millimeter Millimeter VCEO Collector-Emitter Voltage 50 V REF. REF.

2SC2859 0.5A , 35V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Excellent hFE Linearity AL Switching Applications 33Top View C B1CLASSIFICATION OF hFE (1) 1 22K EProduct-Rank 2SC2859-O 2SC2859-Y 2SC2859-GRRange 70~140 120~240 200~400DMark

2SC2893 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI 2SC2893 is Designed for A use in UHF amplifiers up to 400 MHz. 4 5 C FEATURES: B EE POUT = 10.7 W Typical at 400 MHz B Omnigold Metallization System C DJE IFMAXIMUM RATINGS GIC 1.5 A H#8-32 UNCKMINIMUM MAXIMUMVCB 55 V DIMin

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC2883 TRANSISTOR (NPN) 1. BASE FEATURES Low voltage 2. COLLECTOR 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value UnitVCBO 30 VCollector-Base Voltage VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC2884 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package Complementary to 2SA1204 3. EMITTER High DC Current Gain APPLICATIONS Audio Frequency Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Colle

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC2881 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Transition Frequency 3. EMITTER High Voltage Complementary to 2SA1201 APPLICATIONS Power Amplifier and Voltage Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT- 89-3L 2SC2873 TRANSISTOR (NPN) 1. BASE FEATURES Small Flat Package 2. COLLECTOR High Speed Switching Time 3. EMITTER Low Collector-emitter saturation voltage Complementary to 2SA1213 APPLICATIONS Power Amplifier and Switching MAXIMUM RATINGS (Ta=25

JMnic Product Specification Silicon NPN Power Transistors 2SC2810 DESCRIPTION With TO-220C package High voltage,High speed APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emit

JMnic Product Specification Silicon NPN Power Transistors 2SC2816 DESCRIPTION With TO-220C package High voltage High speed APPLICATIONS For high voltage ,high speed and high power switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UN

JMnic Product Specification Silicon NPN Power Transistors 2SC2830 DESCRIPTION With TO-3 package High voltage ,high speed Wide area of safe operation APPLICATIONS For switching regulator applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER COND

JMnic Product Specification Silicon NPN Power Transistors 2SC2832 2SC2832A DESCRIPTION With TO-220 package Low collector saturation voltage High VCBO High speed switching APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER

LAPT 2SC2837Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1186)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol Ratings Unit Symbol Conditions RatingsUnit0.24.80.415.6VCBO 150 V ICBO VCB=150V 100max 0.1 A 9.6 2.0VCEO 150 V AIEBO VEB=5V 100

2SC2883TRANSISTOR (NPN) SOT-89 FEATURES Low voltage 1. BASE 2. COLLECTOR 1 MAXIMUM RATINGS (TA=25 unless otherwise noted) 2 Symbol Parameter Value Units3. EMITTER 3 VCBO 30 VCollector-Base Voltage VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.5 W TJ Junction Temp

2SC2884 SOT-89-3L TRANSISTOR (NPN)FEATURES 1. BASE Small Flat Package2. COLLECTOR Complementary to 2SA1204 High DC Current Gain 3. EMITTER APPLICATIONS Audio Frequency Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC

2SC2881 SOT-89-3L TRANSISTOR (NPN)FEATURES 1. BASE Small Flat Package2. COLLECTOR High Transition Frequency High Voltage3. EMITTER Complementary to 2SA1201 APPLICATIONS Power Amplifier and Voltage Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V

2SC2873SOT- 89-3L TRANSISTOR (NPN)FEATURES 1. BASE Small Flat Package 2. COLLECTOR High Speed Switching Time Low Collector-emitter saturation voltage 3. EMITTER Complementary to 2SA1213 APPLICATIONS Power Amplifier and Switching MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V V Col

2SC2859TRANSISTOR (NPN)SOT23 FEATURES Excellent hFE Linearity Switching Applications 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 35 V CBOVCEO Collector-Emitter Voltage 30 V V Emitter-Base Voltage 5 V EBOI Collector Current 500 mA CP Collector Power Dissipat

2SC2884 SOT-89-3L SOT-89-3L Plastic-Encapsulate NPN Transistors 1. BASEFEATURES 2. COLLECTOR Small Flat Package Complementary to 2SA1204 3. EMITTER High DC Current Gain APPLICATIONS Audio Frequency Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO E

2SC2839 TO-92S Transistor (NPN)TO-92S1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 Features High fT and small Cre(fT=320MHZ typ, Cre=0.95pF typ). MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5 V IC Collector Current Continuous 30 mA PC Colle

2SC2883 SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 4.61 B4.41.61.81.41.42 3. EMITTER 3 2.64.252.43.75Features 0.8MIN0.530.400.48 Low voltage 0.442x)0.13 B0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO 30 VCollector-Base Voltage

WILLAS2SC2881SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-89 FEATURES Small Flat Package1. BASE High Transition Frequency High Voltage2. COLLECTOR 3. EMITTER APPLICATIONS Power Amplifier and Voltage Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V Pb-Free package i

2SC2881A(BR3DG2881AT) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features ,, 2SA1201A(BR3CG1201AT)High fT, high VCEO, small flat package, complementary pair with 2SA1201A(BR3CG1201AT). / Applications

2SC2881 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features ,, 2SA1201 High fT, high VCEO, small flat package, complementary pair with 2SA1201. / Applications Power amplifier

SMD Type TransistorsNPN Transistors2SC2883 Features1.70 0.1 Suitable for output stage of 3 watts amplifier Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate)0.42 0.10.46 0.1 Complementary to 2SA12031.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30

SMD Type TransistorsNPN Transistors2SC2884 Features1.70 0.1 Suitable for output stage of 1 watts amplifier Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1204 0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 C

SMD Type TransistorsNPN Transistors2SC28801.70 0.1 Features High Voltage:VCEO=150V High Transition Frequency Small Flat Package0.42 0.10.46 0.1 Complementary to 2SA12001.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 200 Collector - Emitter Voltage VCEO 150 V Emitter

SMD Type TransistorsNPN Transistors2SC2882 Features 1.70 0.1 Suitable for driver of 30 to 35 watts audio amplifier Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate)0.42 0.10.46 0.1 Complementary to 2SA12021.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO

SMD Type TransistorsNPN Transistors2SC2881 Features1.70 0.1 Small Flat Package High Transition Frequency High Voltage0.42 0.1 Complementary to 2SA1201 0.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120 V Emitter - Base Vol

SMD Type TransistorsNPN Transistors2SC2873 Features1.70 0.1 Small Flat Package High Speed Switching Time Low Collector-emitter saturation voltage0.42 0.1 Complementary to 2SA1213 0.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO

SMD Type TransistorsNPN Transistors2SC2859SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Excellent hFE Linearity:hFE(2)=25(min) (VCE=6V,IC=400mA)1 2+0.05-0.1 0.1 -0.01 Complementary to 2SA1182 0.95+0.11.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 3

General Purpose Transistor2SC2873-G Series (NPN)RoHS DeviceFeatures - Small flat package - High speed switching time. - Low collector-emitter saturation voltage.SOT-89-3LCircuit Diagram0.181(4.60)Collector0.173(4.40)1 : BASE 20.061(1.55)2 : COLLECTORREF.3 : EMITTER1Base0.102(2.60) 0.167(4.25)0.091(2.30) 0.155(3.94)1 2 33Emitter0.020(0.52) 0.023(0.

General Purpose Transistor2SC2873-G Series (NPN)RoHS DeviceFeatures - Small flat package - High speed switching time. - Low collector-emitter saturation voltage.SOT-89-3LCircuit Diagram0.181(4.60)Collector0.173(4.40)1 : BASE 20.061(1.55)2 : COLLECTORREF.3 : EMITTER1Base0.102(2.60) 0.167(4.25)0.091(2.30) 0.155(3.94)1 2 33Emitter0.020(0.52) 0.023(0.

2SC2873Plastic-Encapsulate Transistors TRANSISTOR (NPN)FEATURES Small Flat Package High Speed Switching Time Low Collector-emitter saturation voltage Complementary to 2SA1213 APPLICATIONS Power Amplifier and Switching MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 50 V CBOV Collector-Emitter

2SC2873SQ NPN TransistorFeatures SOT-89 Low Saturation Voltage High Speed Switching Time As Complementary Type of the PNPTransistor 2SA1213SQ is Recommended.Equivalent Circuit 1.Base 2.Collector 3. EmitterMarking Code : 2.Collector2SC2873SQ-O : MX 2SC2873SQ-Y : MY 1.Base3. Emitter.Absolute Maximum Ratings Ratings at 25 ambient temperature unless ot

2SC2873NPN-Silicon General use Transistors1W 1.5A25V 4C1B 2C 3EApplicationsCan be used for switching and amplifying in various SOT-89 electrical and electronic circuit. Maximum ratings Parameters Symbol Rating UnitV VCEO 25Collector-emitter voltage (IB=0) VCBO 40 VCollector-base voltageIE=0 VEBO 6 VEmitter-base voltageIC=0 IC 1.5 AColle

2SC2883 NPN-General use transistor 1W 1.5A30V Applications 4Can be used for switching and amplifying inin various electrical and electronic equipments MAX RATINGS 1 2 3parameters symbol rating unit SOT-89 collector-emitter voltageIB=0 VCEO 30 V collector-base voltageIE=0 VCBO 40 V 1Base 2Collector 3Collector 3Emitter emitter - base

2SC2881Voltage Amplifier ApplicationsVoltage Amplifier Applications Features High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz(typ.) Small Flat Package Complementary to 2SA1201 Absolute Maximum Ratings Ta = 25 * Mounted on a ceramic substrate (250 mm2 x 0.8 t) Electrical Characteristics Ta = 25 REV.08 1 of 22SC2881hFE Classification

2SC2884Y NPN-General use transistor 1W 1.5A25V Applications 4Can be used for switching and amplifying inin various electrical and electronic equipments MAX RATINGS 1 2 3parameters symbol rating unit SOT-89 collector-emitter voltageIB=0 VCEO 25 V collector-base voltageIE=0 VCBO 40 V 1Base 2Collector 3Collector 3Emitter emitter - bas

2SC2873 SOT-89 NPN Transistors 3 Features2 Small Flat Package1.Base1 High Speed Switching Time 2.Collector Low Collector-emitter saturation voltage 3.Emitter Complementary to 2SA1213 Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating UnitCollector - Base Voltage VCBO 50 Collector - Emitter Voltage VC

Plastic-Encapsulate TransistorsFEATURES2SC2873 (NPN) Small flat package. Low saturation voltage VCE(sat)=-0.5V High speed switching time PC=1.0 to 2.0W Complementary to 2SA1213Maximum Ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO 50 V1. BASECollector-Emitter Voltage VCEO 50 V2. COLLECTO SOT-89Emitter-Base

isc Silicon NPN Power Transistor 2SC2827DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Fast Switching SpeedCollector-Emitter Saturation Voltage-: V = 0.7V(Max.)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage,high-speed,power switchingapplicat

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2833 2SC2833A DESCRIPTION With TO-3PN package High speed switching High VCBO Low collector saturation voltage APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2810DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2809DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown VoltageGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulators applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2815DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc Silicon NPN Power Transistor 2SC2898DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 1.0V(Max)@ I = 4A, I = 0.8ACE(sat) C BFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed and high powerswit

isc Silicon NPN Power Transistor 2SC2877DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 40V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1217Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed switching applications.Suitable for output stage of 5

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2831DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulators applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2832 2SC2832A DESCRIPTION With TO-220 package Low collector saturation voltage High VCBO High speed switching APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (Ta=25)

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2831 2SC2831A DESCRIPTION With TO-220 package Low collector saturation voltage High VCBO High speed switching APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector;connected tomounting base 3 EmitterABSOLUTE MAXIMUM RATINGS(Ta=25) SYMB

isc Silicon NPN Power Transistor 2SC2816DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed and high powerapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

isc Silicon NPN Power Transistor 2SC2830DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Fast Switching SpeedCollector-Emitter Saturation Voltage-: V = 0.7V(Max.)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage,high-speed,power switchingapplicat

isc Silicon NPN Power Transistor 2SC2833DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CBOHigh Switching SpeedLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect

isc Silicon NPN Power Transistor 2SC2837DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1186Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor 2SC2899DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.0(Max) @ I = 0.25ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are pa

isc Silicon NPN Power Transistor 2SC2832DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CBOHigh Switching SpeedLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2838DESCRIPTION With MT-200 packageHigh power dissipationHigh current capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSHigh speed and high voltage switching applicationsSwitching regulator applicationsHigh speed DC-DC con

isc Silicon NPN Power Transistor 2SC2834DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CBOHigh Switching SpeedLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2834 2SC2834A DESCRIPTION With TO-3PN package High speed switching High VCBO Low collector saturation voltage APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3