2SC2857
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2857
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5
W
Maximum Collector-Base Voltage |Vcb|: 180
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.05
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 65
MHz
Collector Capacitance (Cc): 2.8
pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package:
TO92
2SC2857
Transistor Equivalent Substitute - Cross-Reference Search
2SC2857
Datasheet (PDF)
..1. Size:80K sanyo
2sc2857.pdf
Ordering number:EN753CNPN Triple Diffused Planar Silicon Transistor2SC2857High-Voltage Driver ApplicationsApplications Package Dimensions Color TV vertical driver, sound driver applications. unit:mm2003AFeatures [2SC2857] High breakdown voltage (VCEO 180V) High collector dissipation (PC=500mW)JEDEC : TO-92 B : BaseEIAJ : SC-43 C : CollectorE : EmitterSANYO
8.1. Size:192K toshiba
2sc2859.pdf
2SC2859 TOSHIBA Transistor Silicon NPN Epitaxial (PCT process) 2SC2859 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) Complementary to 2SA1182. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-
8.2. Size:48K panasonic
2sc2851 e.pdf
Transistor2SC2851Silicon NPN epitaxial planer typeFor high-frequency power amplificationUnit: mm5.9 0.2 4.9 0.2FeaturesHigh transition frequency fT.Output of 0.6W is obtained in the VHF band (f = 175MHz).0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 36 VCollector to emitter voltage VCEO 16 V+0
8.3. Size:45K hitachi
2sc2855 2sc2856.pdf
2SC2855, 2SC2856Silicon NPN EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SA1190 and 2SA1191OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC2855, 2SC2856Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC2855 2SC2856 UnitCollector to base voltage VCBO 90 120 VCollector to emitter voltage VCEO 90 120 VEmitter to bas
8.4. Size:24K hitachi
2sc2853 2sc2854.pdf
2SC2853, 2SC2854Silicon NPN EpitaxialApplication Low frequency amplifier Complementary pair with 2SA1188 and 2SA1189OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC2853, 2SC2854Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC2853 2SC2854 UnitCollector to base voltage VCBO 90 120 VCollector to emitter voltage VCEO 90 120 VEmitter to base voltage
8.5. Size:102K secos
2sc2859.pdf
2SC2859 0.5A , 35V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Excellent hFE Linearity AL Switching Applications 33Top View C B1CLASSIFICATION OF hFE (1) 1 22K EProduct-Rank 2SC2859-O 2SC2859-Y 2SC2859-GRRange 70~140 120~240 200~400DMark
8.6. Size:452K htsemi
2sc2859.pdf
2SC2859TRANSISTOR (NPN)SOT23 FEATURES Excellent hFE Linearity Switching Applications 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 35 V CBOVCEO Collector-Emitter Voltage 30 V V Emitter-Base Voltage 5 V EBOI Collector Current 500 mA CP Collector Power Dissipat
8.7. Size:893K kexin
2sc2859.pdf
SMD Type TransistorsNPN Transistors2SC2859SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Excellent hFE Linearity:hFE(2)=25(min) (VCE=6V,IC=400mA)1 2+0.05-0.1 0.1 -0.01 Complementary to 2SA1182 0.95+0.11.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 3
Datasheet: 2SA1803O
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, 2SA1804O
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, 2SA1805O
, 2SA1805R
, TIP42
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, 2SA1810
, 2SA1810B
, 2SA1810C
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