2N1919 Datasheet and Replacement

   Type Designator: 2N1919
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 1 MHz
   Collector Capacitance (Cc): 14 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO5
      - BJT Cross-Reference Search