2SC2882 Datasheet. Specs and Replacement
Type Designator: 2SC2882 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 130
Noise Figure, dB: -
Package: SOT89
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2SC2882 datasheet
..1. Size:137K toshiba
2sc2882.pdf 
2SC2882 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2882 Power Amplifier Applications Unit mm Voltage Amplifier Applications Suitable for driver of 30 to 35 watts audio amplifier Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SA1202 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit... See More ⇒
..2. Size:960K kexin
2sc2882.pdf
SMD Type Transistors NPN Transistors 2SC2882 Features 1.70 0.1 Suitable for driver of 30 to 35 watts audio amplifier Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) 0.42 0.1 0.46 0.1 Complementary to 2SA1202 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO... See More ⇒
8.1. Size:146K toshiba
2sc2883.pdf
2SC2883 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2883 Audio Frequency Amplifier Applications Unit mm Suitable for output stage of 3 watts amplifier Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SA1203 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO ... See More ⇒
8.2. Size:145K toshiba
2sc2884.pdf
2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2884 Audio Frequency Amplifier Applications Unit mm High DC current gain hFE = 100 to 320 Suitable for output stage of 1 watts amplifier Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1204 Maximum Ratings (Ta = 25 C) Characteristics Symbol... See More ⇒
8.3. Size:187K toshiba
2sc2880.pdf
2SC2880 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC2880 High Voltage Switching Applications Unit mm High voltage VCEO = 150 V High transition frequency f = 120 MHz T Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SA1200 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit... See More ⇒
8.4. Size:145K toshiba
2sc2881.pdf
2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier Applications Unit mm Power Amplifier Applications High voltage VCEO = 120 V High transition frequency fT = 120 MHz (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1201 Absolute Maximum Ratings (Ta = 25 C) Cha... See More ⇒
8.5. Size:128K nec
2sc2885 2sc2946.pdf
DATA SHEET SILICON TRANSISTORS 2SC2885, 2946, 2946(1) NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a small package (MP-3) which is suitable for high-density mounting. These transistors are ideal for drivers in DC/DC converters and switching regulators. There are thr... See More ⇒
8.6. Size:428K mcc
2sc2883-o.pdf
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC2883-O Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC2883-Y Fax (818) 701-4939 Features Power amplifier applications NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Power Transistors Epoxy meets UL 94 V-0 flammability... See More ⇒
8.7. Size:847K mcc
2sc2881-o 2sc2881-y.pdf
2SC2881-O/2SC2881-Y Electrical Characteristics @ 25 C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V(BR)CBO IC=1mA, IE=0 Collector-Base Breakdown Voltage 120 V V(BR)CEO IC=10mA, IB=0 Collector-Emitter Breakdown Voltage 120 V V(BR)EBO IE=1mA, IC=0 Emitter-Base Breakdown Voltage 5.0 V ICBO VCB=120V, IE=0 Collector-Base Cutoff Current 0.1 A IEBO VEB=5V, I... See More ⇒
8.8. Size:428K mcc
2sc2883-y.pdf
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC2883-O Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC2883-Y Fax (818) 701-4939 Features Power amplifier applications NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Power Transistors Epoxy meets UL 94 V-0 flammability... See More ⇒
8.9. Size:231K mcc
2sc2881-y.pdf
MCC 2SC2881-O Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2881-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN Silicon With SOT-89 package Power amplifier applications Power Transistors Epoxy meet... See More ⇒
8.10. Size:231K mcc
2sc2881-o.pdf
MCC 2SC2881-O Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2881-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN Silicon With SOT-89 package Power amplifier applications Power Transistors Epoxy meet... See More ⇒
8.11. Size:364K secos
2sc2883.pdf
2SC2883 1.5 A , 30 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-89 Low Voltage. 4 1 2 CLASSIFICATION OF hFE 3 A E C Product-Rank 2SC2883-O 2SC2883-Y Range 100 200 160 320 B D Marking GO GY F G H K J L PACKAGE INFORMATION Millimeter Millimeter REF. REF. ... See More ⇒
8.12. Size:861K jiangsu
2sc2883.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC2883 TRANSISTOR (NPN) 1. BASE FEATURES Low voltage 2. COLLECTOR 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Unit VCBO 30 V Collector-Base Voltage VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 ... See More ⇒
8.13. Size:139K jiangsu
2sc2884.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC2884 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package Complementary to 2SA1204 3. EMITTER High DC Current Gain APPLICATIONS Audio Frequency Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Colle... See More ⇒
8.14. Size:138K jiangsu
2sc2881.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC2881 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Transition Frequency 3. EMITTER High Voltage Complementary to 2SA1201 APPLICATIONS Power Amplifier and Voltage Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol ... See More ⇒
8.15. Size:846K htsemi
2sc2883.pdf
2SC2883 TRANSISTOR (NPN) SOT-89 FEATURES Low voltage 1. BASE 2. COLLECTOR 1 MAXIMUM RATINGS (TA=25 unless otherwise noted) 2 Symbol Parameter Value Units 3. EMITTER 3 VCBO 30 V Collector-Base Voltage VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.5 W TJ Junction Temp... See More ⇒
8.16. Size:335K htsemi
2sc2884.pdf
2SC2884 SOT-89-3L TRANSISTOR (NPN) FEATURES 1. BASE Small Flat Package 2. COLLECTOR Complementary to 2SA1204 High DC Current Gain 3. EMITTER APPLICATIONS Audio Frequency Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC... See More ⇒
8.17. Size:335K htsemi
2sc2881.pdf
2SC2881 SOT-89-3L TRANSISTOR (NPN) FEATURES 1. BASE Small Flat Package 2. COLLECTOR High Transition Frequency High Voltage 3. EMITTER Complementary to 2SA1201 APPLICATIONS Power Amplifier and Voltage Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V ... See More ⇒
8.18. Size:1159K lge
2sc2884.pdf
2SC2884 SOT-89-3L SOT-89-3L Plastic-Encapsulate NPN Transistors 1. BASE FEATURES 2. COLLECTOR Small Flat Package Complementary to 2SA1204 3. EMITTER High DC Current Gain APPLICATIONS Audio Frequency Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO E... See More ⇒
8.19. Size:240K lge
2sc2883 sot-89.pdf
2SC2883 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 4.6 1 B 4.4 1.6 1.8 1.4 1.4 2 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 MIN 0.53 0.40 0.48 Low voltage 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO 30 V Collector-Base Voltage... See More ⇒
8.20. Size:193K willas
2sc2881.pdf
WILLAS 2SC2881 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-89 FEATURES Small Flat Package 1. BASE High Transition Frequency High Voltage 2. COLLECTOR 3. EMITTER APPLICATIONS Power Amplifier and Voltage Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V Pb-Free package i... See More ⇒
8.22. Size:883K blue-rocket-elect
2sc2881.pdf
2SC2881 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features , , 2SA1201 High fT, high VCEO, small flat package, complementary pair with 2SA1201. / Applications Power amplifier... See More ⇒
8.23. Size:944K kexin
2sc2883.pdf
SMD Type Transistors NPN Transistors 2SC2883 Features 1.70 0.1 Suitable for output stage of 3 watts amplifier Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) 0.42 0.1 0.46 0.1 Complementary to 2SA1203 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 ... See More ⇒
8.24. Size:945K kexin
2sc2884.pdf
SMD Type Transistors NPN Transistors 2SC2884 Features 1.70 0.1 Suitable for output stage of 1 watts amplifier Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1204 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 C... See More ⇒
8.25. Size:1000K kexin
2sc2880.pdf
SMD Type Transistors NPN Transistors 2SC2880 1.70 0.1 Features High Voltage VCEO=150V High Transition Frequency Small Flat Package 0.42 0.1 0.46 0.1 Complementary to 2SA1200 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 200 Collector - Emitter Voltage VCEO 150 V Emitter... See More ⇒
8.26. Size:818K kexin
2sc2881.pdf
SMD Type Transistors NPN Transistors 2SC2881 Features 1.70 0.1 Small Flat Package High Transition Frequency High Voltage 0.42 0.1 Complementary to 2SA1201 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120 V Emitter - Base Vol... See More ⇒
8.27. Size:269K cn shikues
2sc2883o 2sc2883y.pdf
2SC2883 NPN-General use transistor 1W 1.5A 30V Applications 4 Can be used for switching and amplifying in in various electrical and electronic equipments MAX RATINGS 1 2 3 parameters symbol rating unit SOT-89 collector-emitter voltage IB=0 VCEO 30 V collector-base voltage IE=0 VCBO 40 V 1 Base 2 Collector 3 Collector 3 Emitter emitter - base... See More ⇒
8.28. Size:340K cn shikues
2sc2881o 2sc2881y.pdf
2SC2881 Voltage Amplifier Applications Voltage Amplifier Applications Features High Voltage VCEO = 120V High Transition Frequency fT = 120MHz(typ.) Small Flat Package Complementary to 2SA1201 Absolute Maximum Ratings Ta = 25 * Mounted on a ceramic substrate (250 mm2 x 0.8 t) Electrical Characteristics Ta = 25 REV.08 1 of 2 2SC2881 hFE Classification ... See More ⇒
8.29. Size:339K cn shikues
2sc2884y.pdf
2SC2884Y NPN-General use transistor 1W 1.5A 25V Applications 4 Can be used for switching and amplifying in in various electrical and electronic equipments MAX RATINGS 1 2 3 parameters symbol rating unit SOT-89 collector-emitter voltage IB=0 VCEO 25 V collector-base voltage IE=0 VCBO 40 V 1 Base 2 Collector 3 Collector 3 Emitter emitter - bas... See More ⇒
Detailed specifications: 2SC2878B, 2SC2879, 2SC287A, 2SC288, 2SC2880, 2SC2881, 2SC2881O, 2SC2881Y, 2SC1815, 2SC2883, 2SC2883O, 2SC2883Y, 2SC2884, 2SC2885, 2SC2886, 2SC2887, 2SC2888
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