2SC2900 Datasheet and Replacement
Type Designator: 2SC2900
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO218
2SC2900 Substitution
2SC2900 Datasheet (PDF)
2sa1207 2sc2909 2sc2909.pdf
Ordering number:ENN778FPNP/NPN Epitaxial Planar Silicon Transistors2SA1207/2SC2909High-Voltage SwitchingAF 60W Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2003B Excellent linearity of hFE and small Cob.[2SA1207/2SC2909] Fast switching speed.5.04.04.00.450.50.440.451 2 31 : Emitter
2sc2908.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2908 DESCRIPTION With TO-3PN package Low collector saturation voltage APPLICATIONS For use in power amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBO
Datasheet: 2SC2894 , 2SC2895 , 2SC2896 , 2SC2897 , 2SC2898 , 2SC2899 , 2SC29 , 2SC290 , 8550 , 2SC2901 , 2SC2902 , 2SC2903 , 2SC2904 , 2SC2905 , 2SC2906 , 2SC2906A , 2SC2907 .
Keywords - 2SC2900 transistor datasheet
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