2SC2908
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2908
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50
W
Maximum Collector-Base Voltage |Vcb|: 200
V
Maximum Emitter-Base Voltage |Veb|: 12
V
Maximum Collector Current |Ic max|: 5
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package:
TO3PN
2SC2908
Transistor Equivalent Substitute - Cross-Reference Search
2SC2908
Datasheet (PDF)
..2. Size:210K inchange semiconductor
2sc2908.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2908 DESCRIPTION With TO-3PN package Low collector saturation voltage APPLICATIONS For use in power amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBO
8.1. Size:45K sanyo
2sa1207 2sc2909 2sc2909.pdf
Ordering number:ENN778FPNP/NPN Epitaxial Planar Silicon Transistors2SA1207/2SC2909High-Voltage SwitchingAF 60W Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2003B Excellent linearity of hFE and small Cob.[2SA1207/2SC2909] Fast switching speed.5.04.04.00.450.50.440.451 2 31 : Emitter
8.3. Size:179K inchange semiconductor
2sc2902.pdf
isc Product Specificationisc Silicon NPN Power Transistor 2SC2902DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageComplement to Type MJ2955Minimum Lot-to-Lot variations for robust devicePerformance and reliable operation.APPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: 2N3200
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