2SC2908 Datasheet and Replacement
Type Designator: 2SC2908
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: TO3PN
2SC2908 Substitution
2SC2908 Datasheet (PDF)
2sc2908.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2908 DESCRIPTION With TO-3PN package Low collector saturation voltage APPLICATIONS For use in power amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBO
2sa1207 2sc2909 2sc2909.pdf
Ordering number:ENN778FPNP/NPN Epitaxial Planar Silicon Transistors2SA1207/2SC2909High-Voltage SwitchingAF 60W Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2003B Excellent linearity of hFE and small Cob.[2SA1207/2SC2909] Fast switching speed.5.04.04.00.450.50.440.451 2 31 : Emitter
Datasheet: 2SC2901 , 2SC2902 , 2SC2903 , 2SC2904 , 2SC2905 , 2SC2906 , 2SC2906A , 2SC2907 , TIP2955 , 2SC2909 , 2SC291 , 2SC2910 , 2SC2911 , 2SC2912 , 2SC2913 , 2SC2914 , 2SC2915 .
History: MMBT5088LT1G | MMBT5551WT1
Keywords - 2SC2908 transistor datasheet
2SC2908 cross reference
2SC2908 equivalent finder
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2SC2908 substitution
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History: MMBT5088LT1G | MMBT5551WT1
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