2SC2913
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2913
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40
W
Maximum Collector-Base Voltage |Vcb|: 500
V
Maximum Collector-Emitter Voltage |Vce|: 440
V
Maximum Emitter-Base Voltage |Veb|: 7
V
Maximum Collector Current |Ic max|: 8
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 12
Noise Figure, dB: -
Package:
TO3
2SC2913
Transistor Equivalent Substitute - Cross-Reference Search
2SC2913
Datasheet (PDF)
..1. Size:210K inchange semiconductor
2sc2913.pdf
isc Silicon NPN Power Transistor 2SC2913DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
8.1. Size:43K sanyo
2sa1209 2sc2911 2sc2911.pdf
Ordering number:ENN779DPNP/NPN Epitaxial Planar Silicon Transistors2SA1209/2SC2911160V/140mA High-Voltage Switchingand AF 100W Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2009B Good linearity of hFE and small Cob.[2SA1209/2SC2911] Fast switching speed.8.02.74.03.01.60.80.80.60.5
8.2. Size:44K sanyo
2sa1208 2sc2910 2sc2910.pdf
Ordering number:ENN781GPNP/NPN Epitaxial Planar Silicon Transistors2SA1208/2SC2910High-Voltage SwitchingAudio 80W Output Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2006B Excellent linearity of hFE and small Cob.[2SA1208/2SC2910] Fast swtching speed.6.05.0 4.70.50.60.5 0.51 2 31 : Emi
8.3. Size:196K inchange semiconductor
2sc2911.pdf
isc Silicon NPN Power Transistor 2SC2911DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1209Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage switching and AF 100W predriverapplications.ABSOLUTE MAXIMUM R
8.4. Size:208K inchange semiconductor
2sc2914.pdf
isc Silicon NPN Power Transistor 2SC2914DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: 2N3200
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