2SC2940
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2940
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 300
W
Maximum Collector-Base Voltage |Vcb|: 230
V
Maximum Emitter-Base Voltage |Veb|: 7
V
Maximum Collector Current |Ic max|: 30
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package:
TO3
2SC2940
Datasheet (PDF)
8.2. Size:128K nec
2sc2885 2sc2946.pdf
DATA SHEETSILICON TRANSISTORS2SC2885, 2946, 2946(1)NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-VOLTAGE HIGH-SPEED SWITCHINGThe 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a smallpackage (MP-3) which is suitable for high-density mounting. These transistors are ideal for drivers in DC/DCconverters and switching regulators.There are thr
8.3. Size:110K fuji
2sc2944.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
8.4. Size:218K inchange semiconductor
2sc2944.pdf
isc Silicon NPN Power Transistor 2SC2944DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh Switching SpeedLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor and B/W TV power supplyActive power filterIndustrial use power supplyGeneral purpose power ampl
8.5. Size:187K inchange semiconductor
2sc2943.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2943DESCRIPTIONLow Collector Saturation VoltageLow Collector-Emitter Breakdown VoltageGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applications
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