2SC297 Datasheet. Specs and Replacement

Type Designator: 2SC297  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 45 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO37

 2SC297 Substitution

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2SC297 datasheet

 0.1. Size:49K  renesas

2sc2979.pdf pdf_icon

2SC297

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM... See More ⇒

 0.2. Size:179K  inchange semiconductor

2sc2970.pdf pdf_icon

2SC297

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2970 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 3... See More ⇒

 0.3. Size:194K  inchange semiconductor

2sc2979.pdf pdf_icon

2SC297

isc Silicon NPN Power Transistor 2SC2979 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.0V(Max)@ I = 0.75A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed and high power switching app... See More ⇒

 0.4. Size:179K  inchange semiconductor

2sc2975.pdf pdf_icon

2SC297

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2975 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 8... See More ⇒

Detailed specifications: 2SC2962, 2SC2963, 2SC2964, 2SC2965, 2SC2966, 2SC2967, 2SC2968, 2SC2969, 2SA1837, 2SC2970, 2SC2971, 2SC2972, 2SC2973, 2SC2974, 2SC2975, 2SC2976, 2SC2977

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