All Transistors. 2SC2975 Datasheet

 

2SC2975 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC2975
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 800 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3

 2SC2975 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC2975 Datasheet (PDF)

 ..1. Size:179K  inchange semiconductor
2sc2975.pdf

2SC2975
2SC2975

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2975DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 8

 8.1. Size:49K  renesas
2sc2979.pdf

2SC2975
2SC2975

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.2. Size:179K  inchange semiconductor
2sc2970.pdf

2SC2975
2SC2975

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2970DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 3

 8.3. Size:194K  inchange semiconductor
2sc2979.pdf

2SC2975
2SC2975

isc Silicon NPN Power Transistor 2SC2979DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 1.0V(Max)@ I = 0.75ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed and high powerswitching app

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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