2SC2983Y Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2983Y
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: DPAK
2SC2983Y Transistor Equivalent Substitute - Cross-Reference Search
2SC2983Y Datasheet (PDF)
2sc2983.pdf
2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications High transition frequency: fT = 100 MHz (typ.) Complementary to 2SA1225 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 160 VCollector-emitter voltage VCEO 160 VEmitter-ba
2sc2983-o.pdf
2SC2983-OMCCTMMicro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components2SC2983-YCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Low Collector Saturation VoltagePlastic-Encapsulate Execllent current-to-gain characteristics Epoxy meets UL 94 V-0 flammability ratingTransistors Moisture Sensitivity Level 1
2sc2983-y.pdf
2SC2983-OMCCTMMicro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components2SC2983-YCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Low Collector Saturation VoltagePlastic-Encapsulate Execllent current-to-gain characteristics Epoxy meets UL 94 V-0 flammability ratingTransistors Moisture Sensitivity Level 1
2sc2983.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SC2983 TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE High Transition Frequency 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage
2sc2983.pdf
isc Silicon NPN Power Transistor 2SC2983DESCRIPTIONExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and driver stage amplifierapplications .ABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
