2SC3024
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3024
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 12
W
Maximum Collector-Base Voltage |Vcb|: 1700
V
Maximum Collector Current |Ic max|: 3
A
Max. Operating Junction Temperature (Tj): 175
°C
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package:
TO3
2SC3024
Transistor Equivalent Substitute - Cross-Reference Search
2SC3024
Datasheet (PDF)
8.2. Size:189K inchange semiconductor
2sc3026.pdf 
isc Silicon NPN Power Transistor 2SC3026DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage power switching character displayhorizontal deflection output applic
8.3. Size:188K inchange semiconductor
2sc3025.pdf
isc Silicon NPN Power Transistor 2SC3025DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage power switching character displayhorizontal deflection output applic
Datasheet: 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
