2SC3024 Datasheet. Specs and Replacement
Type Designator: 2SC3024 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 12 W
Maximum Collector-Base Voltage |Vcb|: 1700 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
2SC3024 Substitution
- BJT ⓘ Cross-Reference Search
2SC3024 datasheet
isc Silicon NPN Power Transistor 2SC3026 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage power switching character display horizontal deflection output applic... See More ⇒
isc Silicon NPN Power Transistor 2SC3025 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage power switching character display horizontal deflection output applic... See More ⇒
Detailed specifications: 2SC3017, 2SC3018, 2SC3019, 2SC302, 2SC3020, 2SC3021, 2SC3022, 2SC3023, TIP42C, 2SC3025, 2SC3026, 2SC3027, 2SC3028, 2SC3029, 2SC302M, 2SC303, 2SC3030
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