2SC3041 Datasheet and Replacement

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isc Silicon NPN Power Transistor 2SC3041 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNIT SYMBOL PARAMETER VALUE V... See More ⇒

Ordering number EN997B NPN Triple Diffused Planar Silicon Transistor 2SC3040 400V/8A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 500V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3040] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condit... See More ⇒

Ordering number EN938B NPN Triple Diffused Planar Silicon Transistor 2SC3042 400V/12A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 500V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3042] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condi... See More ⇒

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒

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JMnic Product Specification Silicon NPN Power Transistors 2SC3047 DESCRIPTION With TO-220C package High voltage ,high speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Ab... See More ⇒

isc Silicon NPN Power Transistor 2SC3040 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒

isc Silicon NPN Power Transistor 2SC3043 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒

isc Silicon NPN Power Transistor 2SC3047 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI... See More ⇒

isc Silicon NPN Power Transistor 2SC3042 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒