2SC3046
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3046
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100
W
Maximum Collector-Base Voltage |Vcb|: 600
V
Maximum Collector-Emitter Voltage |Vce|: 450
V
Maximum Emitter-Base Voltage |Veb|: 7
V
Maximum Collector Current |Ic max|: 10
A
Max. Operating Junction Temperature (Tj): 125
°C
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package:
TO3
2SC3046
Transistor Equivalent Substitute - Cross-Reference Search
2SC3046
Datasheet (PDF)
8.1. Size:107K sanyo
2sc3040.pdf 
Ordering number:EN997BNPN Triple Diffused Planar Silicon Transistor2SC3040400V/8A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 500V).unit:mm Fast switching speed.2022A Wide ASO.[2SC3040]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Condit
8.3. Size:93K sanyo
2sc3042.pdf
Ordering number:EN938BNPN Triple Diffused Planar Silicon Transistor2SC3042400V/12A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 500V).unit:mm Fast switching speed.2022A Wide ASO.[2SC3042]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Condi
8.4. Size:110K fuji
2sc3047.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
8.6. Size:150K jmnic
2sc3047.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3047 DESCRIPTION With TO-220C package High voltage ,high speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAb
8.7. Size:225K inchange semiconductor
2sc3040.pdf
isc Silicon NPN Power Transistor 2SC3040DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
8.8. Size:189K inchange semiconductor
2sc3043.pdf
isc Silicon NPN Power Transistor 2SC3043DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
8.9. Size:195K inchange semiconductor
2sc3047.pdf
isc Silicon NPN Power Transistor 2SC3047DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI
8.10. Size:190K inchange semiconductor
2sc3041.pdf
isc Silicon NPN Power Transistor 2SC3041DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aUNITSYMBOL PARAMETER VALUEV
8.11. Size:220K inchange semiconductor
2sc3042.pdf
isc Silicon NPN Power Transistor 2SC3042DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
Datasheet: 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
