2SC3058A Datasheet and Replacement

isc Silicon NPN Power Transistor 2SC3058A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 450V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V ) 1 V@ I = 4A CE(sat C High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For switching regulator and DC/DC converter... See More ⇒

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3058 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For switching regulator and DC/DC converter applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITI... See More ⇒

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3058 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(sus) High Switching Speed Wide Area of Safe Operation APPLICATIONS Switching regulators Motor controls Ultrasonic generators Class C and D amplifiers Deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒

isc Silicon NPN Power Transistor 2SC3058 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(sus) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Motor controls Ultrasonic generators Class C and D amplifiers Deflection circu... See More ⇒