2SC3090 Specs and Replacement
Type Designator: 2SC3090
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 500 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO218
- BJT ⓘ Cross-Reference Search
2SC3090 datasheet
..2. Size:208K jmnic
2sc3090.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC3090 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO 800V) Fast switching speed Wide ASO Safe Operating Area APPLICATIONS 500V/10A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbo... See More ⇒
..3. Size:202K inchange semiconductor
2sc3090.pdf 

isc Silicon NPN Power Transistor 2SC3090 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base... See More ⇒
8.1. Size:318K toshiba
2sc3099.pdf 

2SC3099 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3099 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 1.7dB, S 2 = 15dB (f = 500 MHz) 21e NF = 2.5dB, S 2 = 9.5dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO... See More ⇒
8.2. Size:318K toshiba
2sc3098.pdf 

2SC3098 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3098 UHF C Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 2.5dB, S 2 = 14.5dB (f = 500 MHz) 21e NF = 3.0dB, S 2 = 9.0dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO... See More ⇒
8.5. Size:1239K kexin
2sc3099.pdf 

SMD Type Transistors NPN Transistors 2SC3099 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=30mA 1 2 Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec... See More ⇒
8.6. Size:1054K kexin
2sc3098.pdf 

SMD Type Transistors NPN Transistors 2SC3098 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect... See More ⇒
8.7. Size:188K inchange semiconductor
2sc3094.pdf 

isc Silicon NPN Power Transistor 2SC3094 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base... See More ⇒
8.8. Size:194K inchange semiconductor
2sc3092.pdf 

isc Silicon NPN Power Transistor 2SC3092 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base... See More ⇒
Detailed specifications: 2SC3083, 2SC3084, 2SC3085, 2SC3086, 2SC3087, 2SC3088, 2SC3089, 2SC309, 2N3055, 2SC3091, 2SC3092, 2SC3093, 2SC3094, 2SC3095, 2SC3096, 2SC3098, 2SC3099
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