2SC3094 Specs and Replacement
Type Designator: 2SC3094
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 140 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 500 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 45
Package: TO3
2SC3094 Substitution
- BJT ⓘ Cross-Reference Search
2SC3094 datasheet
isc Silicon NPN Power Transistor 2SC3094 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base... See More ⇒
2SC3099 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3099 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 1.7dB, S 2 = 15dB (f = 500 MHz) 21e NF = 2.5dB, S 2 = 9.5dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO... See More ⇒
2SC3098 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3098 UHF C Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 2.5dB, S 2 = 14.5dB (f = 500 MHz) 21e NF = 3.0dB, S 2 = 9.0dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO... See More ⇒
Detailed specifications: 2SC3087, 2SC3088, 2SC3089, 2SC309, 2SC3090, 2SC3091, 2SC3092, 2SC3093, BC337, 2SC3095, 2SC3096, 2SC3098, 2SC3099, 2SC31, 2SC310, 2SC3101, 2SC3102
Keywords - 2SC3094 pdf specs
2SC3094 cross reference
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History: 2SC3091
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