2SC3094 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3094
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 140 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 500 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 45
Noise Figure, dB: -
Package: TO3
2SC3094 Transistor Equivalent Substitute - Cross-Reference Search
2SC3094 Datasheet (PDF)
2sc3094.pdf
isc Silicon NPN Power Transistor 2SC3094DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
2sc3099.pdf
2SC3099 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3099 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure NF = 1.7dB, |S |2 = 15dB (f = 500 MHz) 21e NF = 2.5dB, |S |2 = 9.5dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO
2sc3098.pdf
2SC3098 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3098 UHF~C Band Low Noise Amplifier Applications Unit: mm Low noise figure NF = 2.5dB, |S |2 = 14.5dB (f = 500 MHz) 21e NF = 3.0dB, |S |2 = 9.0dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO
2sc3090.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3090 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO800V) Fast switching speed Wide ASOSafe Operating Area APPLICATIONS 500V/10A Switching Regulator Applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbo
2sc3099.pdf
SMD Type TransistorsNPN Transistors2SC3099SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec
2sc3098.pdf
SMD Type TransistorsNPN Transistors2SC3098SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect
2sc3090.pdf
isc Silicon NPN Power Transistor 2SC3090DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
2sc3092.pdf
isc Silicon NPN Power Transistor 2SC3092DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
