2SC3099 Specs and Replacement
Type Designator: 2SC3099
SMD Transistor Code: MC
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 4000 MHz
Collector Capacitance (Cc): 0.9 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO236
2SC3099 Substitution
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2SC3099 datasheet
2SC3099 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3099 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 1.7dB, S 2 = 15dB (f = 500 MHz) 21e NF = 2.5dB, S 2 = 9.5dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO... See More ⇒
SMD Type Transistors NPN Transistors 2SC3099 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=30mA 1 2 Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec... See More ⇒
2SC3098 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3098 UHF C Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 2.5dB, S 2 = 14.5dB (f = 500 MHz) 21e NF = 3.0dB, S 2 = 9.0dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO... See More ⇒
Detailed specifications: 2SC3090, 2SC3091, 2SC3092, 2SC3093, 2SC3094, 2SC3095, 2SC3096, 2SC3098, A1015, 2SC31, 2SC310, 2SC3101, 2SC3102, 2SC3103, 2SC3104, 2SC3105, 2SC3106
Keywords - 2SC3099 pdf specs
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