2SC3137 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3137
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1500 MHz
Collector Capacitance (Cc): 0.9 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO131
2SC3137 Transistor Equivalent Substitute - Cross-Reference Search
2SC3137 Datasheet (PDF)
2sc3138-o 2sc3138-y.pdf
2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3138 High Voltage Amplifier Applications Unit: mmHigh Voltage Switching Applications High voltage: VCBO = 200 V (max) VCEO = 200 V (max) Small flat package Complementary to 2SA1255 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 20
2sc3138.pdf
2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3138 High Voltage Switching Applications Unit: mm High voltage: VCBO = 200 V (max) V = 200 V (max) CEO Small flat package Complementary to 2SA1255 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 200 VCollector-emitter voltage VCEO
2sa1252 2sc3134.pdf
Ordering number:ENN1048CPNP/NPN Epitaxial Planar Silicon Transistors2SA1252/2SC3134High VEBO, AF Amp ApplicationsFeatures Package Dimensions High VEBO.unit:mm Wide ASO and high durability against breakdown.2018B[2SA1252/2SC3134]0.40.1630 to 0.11 0.95 0.95 21.92.91 : Base2 : Emitter( ) : 2SA1252 3 : CollectorSANYO : CPSpecificationsAbsolute Maxim
2sc3135.pdf
Ordering number:EN1049DPNP/NPN Epitaxial Planar Silicon Transistors2SA1253/2SC3135High-hFE, AF Amp ApplicationsFeatures Package Dimensions High VEBO.unit:mm Wide ASO and high durability against breakdown.2033[2SA1253/2SC3135]B : BaseC : CollectorE : Emitter( ) : 2SA1253SANYO : SPASpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditi
2sc3130.pdf
Transistor2SC3130Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh transition frequency fT.Small collector output capacitance Cob and common base reverse1transfer capacitance Crb. 3Mini type package, allowing downsizing of the equipment andautomatic insert
2sc3130 e.pdf
Transistor2SC3130Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh transition frequency fT.Small collector output capacitance Cob and common base reverse1transfer capacitance Crb. 3Mini type package, allowing downsizing of the equipment andautomatic insert
2sc3130.pdf
SMD Type TransistorsNPN Transistors2SC3130SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec
2sc3134.pdf
SMD Type TransistorsNPN Transistors2SC3134SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features High VEBO. Wide ASO and high durability against breakdown.1 2 Complementary to 2SA1252+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Volta
2sc3138.pdf
SMD Type TransistorsNPN Transistors2SC3138SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=200V1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SA1255+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
