All Transistors. 2SC3143K4 Datasheet

 

2SC3143K4 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC3143K4
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.08 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 2.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: TO236

 2SC3143K4 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC3143K4 Datasheet (PDF)

 7.1. Size:105K  sanyo
2sc3143.pdf

2SC3143K4
2SC3143K4

Ordering number:EN1057BPNP/NPN Epitaxial Planar Silicon Transistors2SA1257/2SC3143High-Voltage Switching, AF Power Amp,100W Output Predriver ApplicationsFeatures Package Dimensions Very small-sized package permitting the 2SA1257/unit:mm2SC3143-applied sets to be made small and slim.2018A High breakdown voltage (VCEO 160V).[2SA1257/2SC3143] Small output capaci

 7.2. Size:896K  kexin
2sc3143.pdf

2SC3143K4
2SC3143K4

SMD Type TransistorsNPN Transistors2SC3143SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features High breakdown voltage Small output capacitance.1 2 Complementary to 2SA1257+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180

 8.1. Size:198K  toshiba
2sc3148.pdf

2SC3143K4
2SC3143K4

 8.2. Size:121K  toshiba
2sc3147.pdf

2SC3143K4
2SC3143K4

 8.3. Size:117K  sanyo
2sc3144.pdf

2SC3143K4
2SC3143K4

Ordering number:EN1058DPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SA1258/2SC314460V/3A for High-Speed Drivers ApplicationsFeatures Package Dimensions High fT.unit:mm High switching speed.2010C Wide ASO.[2SA1258/2SC3144]JEDEC : TO-220AB 1 : Base( ) : 2SA1258 EIAJ : SC-46 2 : Collector3 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25

 8.4. Size:102K  sanyo
2sc3149.pdf

2SC3143K4
2SC3143K4

Ordering number:EN1068CNPN Triple Diffused Planar Silicon Transistor2SC3149800V/1.5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 900V).unit:mm Fast switching speed.2010C Wide ASO.[2SC3149]1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CPara

 8.5. Size:113K  sanyo
2sc3145.pdf

2SC3143K4
2SC3143K4

Ordering number:EN1059DPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SA1259/2SC314560V/5A for High-Speed Drivers ApplicationsFeatures Package Dimensions High fT.unit:mm High switching speed.2010C Wide ASO.[2SA1259/2SC3145]JEDEC : TO-220AB 1 : BaseEIAJ : SC-46 2 : Collector ( ) : 2SA12593 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 2

 8.6. Size:192K  sanyo
2sc3142.pdf

2SC3143K4
2SC3143K4

Ordering number:EN1066ANPN Epitaxial Planar Silicon Transistor2SC3142High-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions FBET series.unit:mm Compact package enabling compactness of sets.2018A High fT and small cre (fT=750MHz typ, cre=0.6 typ).[2SC3142]C : CollectorB : BaseE : EmitterSANYO : CPSpecificationsAbsolute Maximum R

 8.7. Size:138K  utc
2sc3149.pdf

2SC3143K4
2SC3143K4

UNISONIC TECHNOLOGIES CO., LTD 2SC3149 Preliminary NPN SILICON TRANSISTOR NPN TRANSISTOR DESCRIPTION The UTC 2SC3149 are series of NPN silicon planar transistor, and its suited to be used in power amplifier applications. FEATURES * Suit for power amplifier applications ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 32

 8.8. Size:106K  jiangsu
2sc3149s.pdf

2SC3143K4

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO 126 2SC3149S TRANSISTOR (NPN) 1.BASE FEATURES 2.COLLECTOR High Breakdown Voltage 3.EMITTER Fast Switching Speed Wide ASO (Safe Operating Area) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 1400 V VCEO Colle

 8.9. Size:204K  jmnic
2sc3148.pdf

2SC3143K4
2SC3143K4

JMnic Product Specification Silicon NPN Power Transistors 2SC3148 DESCRIPTION With TO-220C package High collector breakdown voltage: VCEO=800V(Min) Excellent switching time: tr=1.0s(Max.) tf=1.0s(Max.@IC=0.8A APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION1 B

 8.10. Size:337K  jmnic
2sc3149.pdf

2SC3143K4
2SC3143K4

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC3149 DESCRIPTION With TO-220C package High breakdown voltage: VCBO=900V(Min) Fast switching speed. Wide ASO (Safe Operating Area) APPLICATIONS 800V/1.5A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum r

 8.11. Size:8886K  kexin
2sc3142.pdf

2SC3143K4
2SC3143K4

SMD Type TransistorsNPN Transistors2SC3142SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Colle

 8.12. Size:193K  inchange semiconductor
2sc3148.pdf

2SC3143K4
2SC3143K4

isc Silicon NPN Power Transistor 2SC3148DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applications.ABSOLUTE

 8.13. Size:196K  inchange semiconductor
2sc3144.pdf

2SC3143K4
2SC3143K4

isc Silicon NPN Darlington Power Transistor 2SC3144DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = 1.5AFE CWide Area of Safe OperationComplement to Type 2SA1258Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed drivers applications.

 8.14. Size:196K  inchange semiconductor
2sc3149.pdf

2SC3143K4
2SC3143K4

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3149 DESCRIPTION With TO-220C package High breakdown voltage: VCBO=900V(Min) Fast switching speed. Wide ASO (Safe Operating Area) APPLICATIONS 800V/1.5A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute

 8.15. Size:193K  inchange semiconductor
2sc3146.pdf

2SC3143K4
2SC3143K4

isc Silicon NPN Darlington Power Transistor 2SC3146DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = 3.5AFE CWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed drivers applications.ABSOLUTE MAXIMUM RATINGS(T =

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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