2SC3164 Specs and Replacement
Type Designator: 2SC3164
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO247
- BJT ⓘ Cross-Reference Search
2SC3164 datasheet
..1. Size:151K jmnic
2sc3164.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3164 DESCRIPTION With TO-247 package Switching power transistor High breakdown voltage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collect... See More ⇒
..3. Size:122K inchange semiconductor
2sc3164.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3164 DESCRIPTION With TO-247 package Switching power transistor High breakdown voltage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE U... See More ⇒
8.2. Size:145K jmnic
2sc3163.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3163 DESCRIPTION With TO-220C package High breakdown voltage High speed switching PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-e... See More ⇒
8.3. Size:151K jmnic
2sc3169.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3169 DESCRIPTION With TO-220Fa package Low collector saturation voltage High breakdown voltge APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage... See More ⇒
8.5. Size:180K inchange semiconductor
2sc3168.pdf
isc Product Specification isc Silicon NPN Power Transistor 2SC3168 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage Minimum Lot-to-Lot variations for robust device Performance and reliable operation. APPLICATIONS Switching regulator Motor controls Deflections circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C... See More ⇒
8.6. Size:196K inchange semiconductor
2sc3163.pdf
isc Silicon NPN Power Transistor 2SC3163 DESCRIPTION Low Collector Saturation Voltage- V = 1.0V(Max.)@I = 3A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒
8.7. Size:197K inchange semiconductor
2sc3169.pdf
isc Silicon NPN Power Transistor 2SC3169 DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 1A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI... See More ⇒
Detailed specifications: 2SC3158Y, 2SC3159, 2SC315H, 2SC316, 2SC3160, 2SC3161, 2SC3162, 2SC3163, A1941, 2SC3165, 2SC3166, 2SC3167, 2SC3168, 2SC3169, 2SC317, 2SC3170, 2SC3171
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