2SC317H Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC317H
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO1
2SC317H Transistor Equivalent Substitute - Cross-Reference Search
2SC317H Datasheet (PDF)
2sc3176.pdf
Ordering number:EN1312BNPN Epitaxial Planar Silicon Transistor2SC3176CRT Horizontal Deflection OutputApplications (with Damper Diode)Features Package Dimensions Fast switching speed.unit:mm Especially suited for use in high-definition CRT2010Cdisplay (VCC=12 to 24V).[2SC3176] Wide ASO.1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC463 : EmitterSpecifi
2sc3059 2sc3060 2sc3061 2sc3178.pdf
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2sc3170.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3170 DESCRIPTION With TO-220Fa package Low collector saturation voltage High breakdown voltge APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage
2sc3179.pdf
2SC3179Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1262)Application : Audio and General PurposeExternal Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)2SC3179 UnitSymbol 2SC3179 Symbol ConditionsUnit0.24.80.210.20.1VCBO 80 ICBO VCB=80V 100max A 2.0V100max AVCEO 60 IEBO VEB=6V
2sc3179.pdf
isc Silicon NPN Power Transistor 2SC3179DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOLow Collector Saturation Voltage: V = 0.6V(Max.)@I = 2ACE(sat) CComplement to Type 2SA1262Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM
2sc3171.pdf
isc Silicon NPN Power Transistor 2SC3171DESCRIPTION Collector-Emiiter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 1.0V(Max.)@ I = 5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATI
2sc3170.pdf
isc Silicon NPN Power Transistor 2SC3170DESCRIPTION Collector-Emiiter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 1.0V(Max.)@ I = 3ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATI
2sc3177.pdf
isc Silicon NPN Power Transistor 2SC3177DESCRIPTIONWith TO-126 packagingLow collector-to-emitter saturation voltageFast switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSRelay driversHigh-speed invertersConvertersSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
2sc3175.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3175DESCRIPTIONLow Collector Saturation VoltageHigh switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEspecially suited for use in high definitionCRT display(V =12 to 24V)CCABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
