2SC3181 Datasheet and Replacement
Type Designator: 2SC3181
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 190 pF
Forward Current Transfer Ratio (hFE), MIN: 55
Noise Figure, dB: -
Package: TO247
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2SC3181 Datasheet (PDF)
2sc3181.pdf

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2sc3181.pdf

isc Silicon NPN Power Transistor 2SC3181DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max.) @I = 6ACE(sat) CGood Linearity of hFEComplement to Type 2SA1264Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 55W high fidelity audio frequencyamplifier output stage appl
2sc3181n.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC3181N DESCRIPTION With TO-3P(I) package Complement to type 2SA1264N APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol
2sc3181r 2sc3181o.pdf

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3181DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max.) @I = 6ACE(sat) CGood Linearity of hFEComplement to Type 2SA1264APPLICATIONSPower amplifier applicationsRecommend for 55W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: BU406TU | BC546ATA | KTC3205 | SS8050J | 2SC1815-Y | BD13910STU | 2SB772
Keywords - 2SC3181 transistor datasheet
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History: BU406TU | BC546ATA | KTC3205 | SS8050J | 2SC1815-Y | BD13910STU | 2SB772



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