2SC3182NR Specs and Replacement
Type Designator: 2SC3182NR
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 220 pF
Forward Current Transfer Ratio (hFE), MIN: 55
Package: TO247
2SC3182NR Substitution
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2SC3182NR datasheet
JMnic Product Specification Silicon NPN Power Transistors 2SC3182N DESCRIPTION With TO-3P(I) package Complement to type 2SA1265N APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol ... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3182N DESCRIPTION With TO-3P(I) package Complement to type 2SA1265N APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P... See More ⇒
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
isc Silicon NPN Power Transistor 2SC3182 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max.) @I = 7A CE(sat) C Good Linearity of h FE Complement to Type 2SA1265 Minimum Lot-to-Lot variations for robust device performance and reliable operation] APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage app... See More ⇒
Detailed specifications: 2SC3180R, 2SC3181, 2SC3181N, 2SC3181NO, 2SC3181NR, 2SC3182, 2SC3182N, 2SC3182NO, 9014, 2SC3183, 2SC3183K, 2SC3183L, 2SC3183M, 2SC3184, 2SC3184K, 2SC3184L, 2SC3184M
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