2SC3182NR Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3182NR
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 220 pF
Forward Current Transfer Ratio (hFE), MIN: 55
Noise Figure, dB: -
Package: TO247
2SC3182NR Transistor Equivalent Substitute - Cross-Reference Search
2SC3182NR Datasheet (PDF)
2sc3182n.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3182N DESCRIPTION With TO-3P(I) package Complement to type 2SA1265N APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol
2sc3182n.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3182N DESCRIPTION With TO-3P(I) package Complement to type 2SA1265N APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P
2sc3182.pdf
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2sc3182.pdf
isc Silicon NPN Power Transistor 2SC3182DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max.) @I = 7ACE(sat) CGood Linearity of hFEComplement to Type 2SA1265Minimum Lot-to-Lot variations for robust deviceperformance and reliable operation]APPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage app
Datasheet: 2SC3180R , 2SC3181 , 2SC3181N , 2SC3181NO , 2SC3181NR , 2SC3182 , 2SC3182N , 2SC3182NO , 2SC2655 , 2SC3183 , 2SC3183K , 2SC3183L , 2SC3183M , 2SC3184 , 2SC3184K , 2SC3184L , 2SC3184M .
