All Transistors. 2SC3187 Datasheet

 

2SC3187 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC3187
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO92

 2SC3187 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC3187 Datasheet (PDF)

 ..1. Size:40K  panasonic
2sc3187 e.pdf

2SC3187 2SC3187

Transistor2SC3187Silicon NPN triple diffusion planer typeFor small TV video outputUnit: mm5.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Small collector output capacitance Cob.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 300 V1.27 1.27Collector to emitter voltage VC

 ..2. Size:36K  panasonic
2sc3187.pdf

2SC3187 2SC3187

Transistor2SC3187Silicon NPN triple diffusion planer typeFor small TV video outputUnit: mm5.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Small collector output capacitance Cob.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 300 V1.27 1.27Collector to emitter voltage VC

 8.1. Size:90K  toshiba
2sc3180.pdf

2SC3187 2SC3187

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.2. Size:90K  toshiba
2sc3181.pdf

2SC3187 2SC3187

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.3. Size:91K  toshiba
2sc3182.pdf

2SC3187 2SC3187

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.4. Size:98K  sanyo
2sc3184.pdf

2SC3187 2SC3187

Ordering number:EN1252CNPN Triple Diffused Planar Silicon Transistor2SC3184800V/0.5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 900V).unit:mm Fast switching speed.2010C Wide ASO.[2SC3184]1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CPara

 8.5. Size:105K  sanyo
2sc3183.pdf

2SC3187 2SC3187

Ordering number:EN1251ANPN Triple Diffused Planar Silicon Transistor2SC3183800V/0.2A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 900V).unit:mm Fast switching speed.2010C Wide ASO.[2SC3183]1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CPara

 8.6. Size:661K  sanyo
2sc3189.pdf

2SC3187 2SC3187

 8.7. Size:195K  jmnic
2sc3180n.pdf

2SC3187 2SC3187

JMnic Product Specification Silicon NPN Power Transistors 2SC3180N DESCRIPTION With TO-3P(I) package Complement to type 2SA1263N APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol

 8.8. Size:198K  jmnic
2sc3182n.pdf

2SC3187 2SC3187

JMnic Product Specification Silicon NPN Power Transistors 2SC3182N DESCRIPTION With TO-3P(I) package Complement to type 2SA1265N APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol

 8.9. Size:195K  jmnic
2sc3181n.pdf

2SC3187 2SC3187

JMnic Product Specification Silicon NPN Power Transistors 2SC3181N DESCRIPTION With TO-3P(I) package Complement to type 2SA1264N APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol

 8.10. Size:178K  cn sptech
2sc3181r 2sc3181o.pdf

2SC3187 2SC3187

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3181DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max.) @I = 6ACE(sat) CGood Linearity of hFEComplement to Type 2SA1264APPLICATIONSPower amplifier applicationsRecommend for 55W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

 8.11. Size:198K  inchange semiconductor
2sc3184.pdf

2SC3187 2SC3187

isc Silicon NPN Power Transistor 2SC3184DESCRIPTIONHigh breakdown voltage -: VCBO900VGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsSwitching Regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 900 VCBO

 8.12. Size:203K  inchange semiconductor
2sc3180.pdf

2SC3187 2SC3187

isc Silicon NPN Power Transistor 2SC3180DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max.) @I = 5ACE(sat) CGood Linearity of hFEComplement to Type 2SA1263Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 40W high fidelity audio frequencyamplifier output stage appl

 8.13. Size:221K  inchange semiconductor
2sc3180n.pdf

2SC3187 2SC3187

isc Silicon NPN Power Transistor 2SC3180NDESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max.) @I = 5ACE(sat) CGood Linearity of hFEComplement to Type 2SA1263NMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 40W high fidelity audio frequencyamplifier output stage ap

 8.14. Size:203K  inchange semiconductor
2sc3181.pdf

2SC3187 2SC3187

isc Silicon NPN Power Transistor 2SC3181DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max.) @I = 6ACE(sat) CGood Linearity of hFEComplement to Type 2SA1264Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 55W high fidelity audio frequencyamplifier output stage appl

 8.15. Size:163K  inchange semiconductor
2sc3182n.pdf

2SC3187 2SC3187

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3182N DESCRIPTION With TO-3P(I) package Complement to type 2SA1265N APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P

 8.16. Size:161K  inchange semiconductor
2sc3181n.pdf

2SC3187 2SC3187

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3181N DESCRIPTION With TO-3P(I) package Complement to type 2SA1264N APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P

 8.17. Size:203K  inchange semiconductor
2sc3182.pdf

2SC3187 2SC3187

isc Silicon NPN Power Transistor 2SC3182DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max.) @I = 7ACE(sat) CGood Linearity of hFEComplement to Type 2SA1265Minimum Lot-to-Lot variations for robust deviceperformance and reliable operation]APPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage app

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
Back to Top