2SC3230 PDF and Equivalents Search

 ..1. Size:198K  inchange semiconductor

 2sc3230.pdf

isc Silicon NPN Power Transistor 2SC3230 DESCRIPTION Collector-Emitter Breakdown Voltage V = 30V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1276 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll... See More ⇒

 8.1. Size:112K  1

 2sc3236.pdf

... See More ⇒

 8.2. Size:121K  1

 2sc3239.pdf

... See More ⇒

 8.3. Size:150K  toshiba

 2sc3233.pdf

2SC3233 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3233 Switching Regulator and High Voltage Switching Unit mm Applications High Speed DC-DC Converter Applications Excellent switching times tr = 1.0 s (max) t = 1.0 s (max), (I = 0.8 A) f C High collector breakdown voltage V = 400 V CEO Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating... See More ⇒

 8.4. Size:184K  inchange semiconductor

 2sc3235.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3235 DESCRIPTION Low Collector Saturation Voltage High switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Especially suited for high voltage,high speed and high power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒

 8.5. Size:193K  inchange semiconductor

 2sc3231.pdf

isc Silicon NPN Power Transistor 2SC3231 DESCRIPTION Collector-Emitter Breakdown Voltage V = 60V(Min) (BR)CEO Large Current Capability High Collector Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒