All Transistors. 2SC3237 Datasheet

 

2SC3237 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC3237
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: XND

 2SC3237 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC3237 Datasheet (PDF)

 8.1. Size:112K  1
2sc3236.pdf

2SC3237
2SC3237

 8.2. Size:121K  1
2sc3239.pdf

2SC3237
2SC3237

 8.3. Size:150K  toshiba
2sc3233.pdf

2SC3237
2SC3237

2SC3233 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3233 Switching Regulator and High Voltage Switching Unit: mm Applications High Speed DC-DC Converter Applications Excellent switching times: tr = 1.0 s (max) t = 1.0 s (max), (I = 0.8 A) f C High collector breakdown voltage: V = 400 V CEOMaximum Ratings (Ta = 25C) Characteristics Symbol Rating

 8.4. Size:184K  inchange semiconductor
2sc3235.pdf

2SC3237
2SC3237

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3235DESCRIPTIONLow Collector Saturation VoltageHigh switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEspecially suited for high voltage,high speed andhigh power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

 8.5. Size:193K  inchange semiconductor
2sc3231.pdf

2SC3237
2SC3237

isc Silicon NPN Power Transistor 2SC3231DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 60V(Min)(BR)CEOLarge Current CapabilityHigh Collector Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

 8.6. Size:198K  inchange semiconductor
2sc3230.pdf

2SC3237
2SC3237

isc Silicon NPN Power Transistor 2SC3230DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 30V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1276Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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