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2SC3257 Specs and Replacement

Type Designator: 2SC3257

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO220

 2SC3257 Substitution

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2SC3257 datasheet

 ..1. Size:140K  toshiba

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2SC3257

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 ..2. Size:192K  inchange semiconductor

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2SC3257

isc Silicon NPN Power Transistor 2SC3257 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒

 8.2. Size:136K  toshiba

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2SC3257

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Detailed specifications: 2SC3255, 2SC3255Q, 2SC3255R, 2SC3255S, 2SC3256, 2SC3256Q, 2SC3256R, 2SC3256S, 2SB817, 2SC3258, 2SC3258O, 2SC3258Y, 2SC3259, 2SC326, 2SC3260, 2SC3261, 2SC3262

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