2SC3259 Datasheet and Replacement
Type Designator: 2SC3259
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40
W
Maximum Collector-Base Voltage |Vcb|: 800
V
Maximum Collector-Emitter Voltage |Vce|: 800
V
Maximum Emitter-Base Voltage |Veb|: 7
V
Maximum Collector Current |Ic max|: 3
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package:
TO220
-
BJT ⓘ Cross-Reference Search
2SC3259 Datasheet (PDF)
8.1. Size:140K toshiba
2sc3257.pdf 

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.2. Size:136K toshiba
2sc3258.pdf 

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.3. Size:103K sanyo
2sc3254.pdf 

Ordering number:EN1200CPNP/NPN Epitaxial Planar Silicon Transistors2SA1290/2SC325460V/7A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2010B Inverters, converters (strobo, flash, fluorescent lamp[2SA1290/2SC3254]lighting circuit). Power amp (high power car stereo, motor controller)
8.4. Size:103K sanyo
2sc3255.pdf 

Ordering number:EN1201CPNP/NPN Epitaxial Planar Silicon Transistors2SA1291/2SC325560V/10A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2010B Inverters, converters (strobo, flash, fluorescent lamp[2SA1291/2SC3255]lighting circuit). Power amp (high power car stereo, motor controller
8.5. Size:104K sanyo
2sc3253.pdf 

Ordering number:EN1199CPNP/NPN Epitaxial Planar Silicon Transistors2SA1289/2SC325360V/5A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2010B Inverters, converters (strobo, flash, fluorescent lamp[2SA1289/2SC3253]lighting circuit). Power amp (high power car stereo, motor controller)
8.6. Size:98K sanyo
2sc3256.pdf 

Ordering number:EN2370PNP/NPN Epitaxial Planar Silicon Transistors2SA1292/2SC325660V/15A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance, lamp drivers for electricalunit:mmequipment.2022 Inverters, converters (strobo, flash, fluorescent lamp[2SA1292/2SC3256]lighting circuit). Power amp (high-power care stereo, motor control).
8.7. Size:199K inchange semiconductor
2sc3254.pdf 

isc Silicon NPN Power Transistor 2SC3254DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1290Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipmentInverters, convertersPower amplifierSwitching regulato
8.8. Size:192K inchange semiconductor
2sc3257.pdf 

isc Silicon NPN Power Transistor 2SC3257DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
8.9. Size:216K inchange semiconductor
2sc3255.pdf 

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3255DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1291Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipmentInverters, convertersPower amplifi
8.10. Size:199K inchange semiconductor
2sc3258.pdf 

isc Silicon NPN Power Transistor 2SC3258DESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max.)@ I = 3ACE(sat) CHigh Switching SpeedComplement to Type 2SA1293Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
8.11. Size:183K inchange semiconductor
2sc3250.pdf 

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3250DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown Voltage-: V = 300V (Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgenera
8.12. Size:198K inchange semiconductor
2sc3252.pdf 

isc Silicon NPN Power Transistor 2SC3252DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1288Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipmentInverters, convertersPower amplifierSwitching regulato
8.13. Size:198K inchange semiconductor
2sc3253.pdf 

isc Silicon NPN Power Transistor 2SC3253DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1289Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipmentInverters, convertersPower amplifierSwitching regulato
8.14. Size:203K inchange semiconductor
2sc3256.pdf 

isc Silicon NPN Power Transistor 2SC3256DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1292Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipmentInverters, convertersPower amplifierSwitching regulato
Datasheet: 2SC3256
, 2SC3256Q
, 2SC3256R
, 2SC3256S
, 2SC3257
, 2SC3258
, 2SC3258O
, 2SC3258Y
, S9013
, 2SC326
, 2SC3260
, 2SC3261
, 2SC3262
, 2SC3263
, 2SC3264
, 2SC3265
, 2SC3265O
.
History: 2SC2592
| 2SB566
| DTA043XUB
Keywords - 2SC3259 transistor datasheet
2SC3259 cross reference
2SC3259 equivalent finder
2SC3259 lookup
2SC3259 substitution
2SC3259 replacement