2SC3279P Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3279P
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 27 pF
Forward Current Transfer Ratio (hFE), MIN: 420
Noise Figure, dB: -
Package: TO92
2SC3279P Transistor Equivalent Substitute - Cross-Reference Search
2SC3279P Datasheet (PDF)
2sc3279.pdf
2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3279 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications High DC current gain and excellent hFE linearity : h = 140~600 (V = 1 V, I = 0.5 A) FE (1) CE C: h = 70 (min), 200 (typ.) (V = 1 V, I = 2 A) FE (2) CE C Low saturation voltage: V = 0.5 V (max) CE (sat)(I = 2 A, I = 5
2sc3279-n.pdf
2SC3279-LMCCTM Micro Commercial Components2SC3279-M20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SC3279-NPhone: (818) 701-49332SC3279-PFax: (818) 701-4939Features High DC Current Gain and excellent hFE LinearityNPN Siliconh =140-600 (V =1.0V, I =0.5A)FE(1) CE ChFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A)Epitaxial Transistors E
2sc3279-m.pdf
2SC3279-LMCCTM Micro Commercial Components2SC3279-M20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SC3279-NPhone: (818) 701-49332SC3279-PFax: (818) 701-4939Features High DC Current Gain and excellent hFE LinearityNPN Siliconh =140-600 (V =1.0V, I =0.5A)FE(1) CE ChFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A)Epitaxial Transistors E
2sc3279-l.pdf
2SC3279-LMCCTM Micro Commercial Components2SC3279-M20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SC3279-NPhone: (818) 701-49332SC3279-PFax: (818) 701-4939Features High DC Current Gain and excellent hFE LinearityNPN Siliconh =140-600 (V =1.0V, I =0.5A)FE(1) CE ChFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A)Epitaxial Transistors E
2sc3279-p.pdf
2SC3279-LMCCTM Micro Commercial Components2SC3279-M20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SC3279-NPhone: (818) 701-49332SC3279-PFax: (818) 701-4939Features High DC Current Gain and excellent hFE LinearityNPN Siliconh =140-600 (V =1.0V, I =0.5A)FE(1) CE ChFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A)Epitaxial Transistors E
2sc3279.pdf
2SC3279 2A , 30V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC current gain and excellent hFE linearity. G H Low saturation voltage. 1Emitter 1112Collector 222333J 3Base CLASSIFICATION OF hFE A DMillimeter REF. Product-Rank 2SC32
2sc3279.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors2SC3279 TRANSISTOR (NPN)TO-92 FEATURES High DC current gain and excellent hFE linearity1. EMITTER Low saturation voltage2. COLLECTOR3. BASE Equivalent Circuit 2SC3279=Device code 2SC Solid dot=Green molding compound device, 3279 if none,the normal deviceZ Z=Ra
2sc3279 to-92.pdf
2SC3279(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE FeaturesHigh DC current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 6 V Dimensions in inches and (mi
2sc3279 3da3279.pdf
2SC3279(3DA3279) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power amplifier applications. : Features: High DC current gain and excellent h linearity, low saturation voltage. FE/Absolute maximum ratings(Ta=25) Symbol
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
